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WS2/并五苯异质结中的层间激子景观。

Interlayer exciton landscape in WS/tetracene heterostructures.

机构信息

Department of Physics, Philipps-Universität Marburg, 35037 Marburg, Germany.

Department of Chemistry, Purdue University, West Lafayette, Indiana, 47907, USA.

出版信息

Nanoscale. 2023 Jan 27;15(4):1730-1738. doi: 10.1039/d2nr02055f.

Abstract

The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been made combining different monolayers of transition metal dichalcogenides (TMDs), little is known about TMD-based heterostructures including organic layers of molecules. Here, we present a joint theory-experiment study on a TMD/tetracene heterostructure demonstrating clear signatures of spatially separated interlayer excitons in low temperature photoluminescence spectra. Here, the Coulomb-bound electrons and holes are localized either in the TMD or in the molecule layer, respectively. We reveal both in theory and experiment signatures of the entire intra- and interlayer exciton landscape in the photoluminescence spectra. In particular, we find both in theory and experiment a pronounced transfer of intensity from the intralayer TMD exciton to a series of energetically lower interlayer excitons with decreasing temperature. In addition, we find signatures of phonon-sidebands stemming from these interlayer exciton states. Our findings shed light on the microscopic nature of interlayer excitons in TMD/molecule heterostructures and could have important implications for technological applications of these materials.

摘要

二维材料的垂直堆叠形成异质结构,产生了大量有趣的光电性质,并为技术发展带来了前所未有的潜力。虽然在组合不同的过渡金属二卤化物(TMD)单层方面已经取得了很大进展,但对于包括有机分子层在内的 TMD 基异质结构知之甚少。在这里,我们提出了一个 TMD/并五苯异质结构的联合理论-实验研究,在低温光致发光光谱中证明了空间分离的层间激子的清晰特征。在这里,库仑束缚的电子和空穴分别定域在 TMD 或分子层中。我们在光致发光光谱中揭示了理论和实验中整个层内和层间激子景观的特征。特别是,我们在理论和实验中都发现,随着温度的降低,从层内 TMD 激子到一系列能量较低的层间激子的强度转移显著。此外,我们还发现了这些层间激子态起源的声子边带的特征。我们的发现揭示了 TMD/分子异质结构中层间激子的微观性质,并可能对这些材料的技术应用具有重要意义。

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