Mubarokah Zahrah Ramadlan, Mahmed Norsuria, Norizan Mohd Natashah, Mohamad Ili Salwani, Abdullah Mohd Mustafa Al Bakri, Błoch Katarzyna, Nabiałek Marcin, Baltatu Madalina Simona, Sandu Andrei Victor, Vizureanu Petrica
Faculty of Chemical Engineering & Technology, Universiti Malaysia Perlis (UniMAP), Arau 01000, Malaysia.
Centre of Excellence Geopolymer and Green Technology (CEGeoGTech), Universiti Malaysia Perlis (UniMAP), Arau 01000, Malaysia.
Materials (Basel). 2023 Jan 3;16(1):437. doi: 10.3390/ma16010437.
A silver sulfide (AgS) semiconductor photocatalyst film has been successfully synthesized using a solution casting method. To produce the photocatalyst films, two types of AgS powder were used: a commercialized and synthesized powder. For the commercialized powder (CF/comAgS), the AgS underwent a rarefaction process to reduce its crystallite size from 52 nm to 10 nm, followed by incorporation into microcrystalline cellulose using a solution casting method under the presence of an alkaline/urea solution. A similar process was applied to the synthesized AgS powder (CF/syntAgS), resulting from the co-precipitation process of silver nitrate (AgNO) and thiourea. The prepared photocatalyst films and their photocatalytic efficiency were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and UV-visible spectroscopy (UV-Vis). The results showed that the incorporation of the AgS powder into the cellulose films could reduce the peak intensity of the oxygen-containing functional group, which indicated the formation of a composite film. The study of the crystal structure confirmed that all of the as-prepared samples featured a monoclinic acanthite AgS structure with space group P/C. It was found that the degradation rate of the methylene blue dye reached 100% within 2 h under sunlight exposure when using CF/comAgS and 98.6% for the CF/syntAgS photocatalyst film, and only 48.1% for the bare AgS powder. For the non-exposure sunlight samples, the degradation rate of only 33-35% indicated the importance of the semiconductor near-infrared (NIR) AgS photocatalyst used.
采用溶液浇铸法成功合成了硫化银(AgS)半导体光催化剂薄膜。为制备光催化剂薄膜,使用了两种类型的AgS粉末:商业化粉末和合成粉末。对于商业化粉末(CF/comAgS),AgS经历了疏松过程以将其微晶尺寸从52 nm减小到10 nm,然后在碱性/尿素溶液存在下使用溶液浇铸法将其掺入微晶纤维素中。类似的过程应用于合成的AgS粉末(CF/syntAgS),该粉末由硝酸银(AgNO)和硫脲的共沉淀过程制得。通过傅里叶变换红外光谱(FTIR)、X射线衍射(XRD)和紫外-可见光谱(UV-Vis)对制备的光催化剂薄膜及其光催化效率进行了表征。结果表明,将AgS粉末掺入纤维素薄膜中可降低含氧官能团的峰强度,这表明形成了复合薄膜。晶体结构研究证实,所有制备的样品均具有单斜辉银矿AgS结构,空间群为P/C。结果发现,在阳光照射下,使用CF/comAgS时亚甲基蓝染料的降解率在2小时内达到100%,CF/syntAgS光催化剂薄膜的降解率为98.6%,而裸AgS粉末的降解率仅为48.1%。对于未暴露在阳光下的样品,仅33-35%的降解率表明所使用的半导体近红外(NIR)AgS光催化剂的重要性。