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填补二维电催化剂杂原子掺杂与边缘富集之间的差距以增强析氢性能

Filling the Gap between Heteroatom Doping and Edge Enrichment of 2D Electrocatalysts for Enhanced Hydrogen Evolution.

作者信息

Wang Wenbin, Song Yun, Ke Chengxuan, Li Yang, Liu Yong, Ma Chen, Wu Zongxiao, Qi Junlei, Bao Kai, Wang Lingzhi, Wu Jingkun, Jiang Shan, Zhao Jiong, Lee Chun-Sing, Chen Ye, Luo Guangfu, He Qiyuan, Ye Ruquan

机构信息

City University of Hong Kong Shenzhen Research Institute, Shenzhen, Guangdong518057, China.

Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.

出版信息

ACS Nano. 2023 Jan 11. doi: 10.1021/acsnano.2c09423.

DOI:10.1021/acsnano.2c09423
PMID:36629409
Abstract

Composition modulation and edge enrichment are established protocols to steer the electronic structures and catalytic activities of two-dimensional (2D) materials. It is believed that a heteroatom enhances the catalytic performance by activating the chemically inert basal plane of 2D crystals. However, the edge and basal plane have inherently different electronic states, and how the dopants affect the edge activity remains ambiguous. Here we provide mechanistic insights into this issue by monitoring the hydrogen evolution reaction (HER) performance of phosphorus-doped MoS (P-MoS) nanosheets via on-chip electrocatalytic microdevices. Upon phosphorus doping, MoS nanosheet gets catalytically activated and, more importantly, shows higher HER activity in the edge than the basal plane. In situ transport measurement demonstrates that the improved HER performance of P-MoS is derived from intrinsic catalytic activity rather than charge transfer. Density functional theory calculations manifest that the edge sites of P-MoS are energetically more favorable for HER. The finding guides the rational design of edge-dominant P-MoS, reaching a minuscule onset potential of ∼30 mV and Tafel slope of 48 mV/dec that are benchmarked against other activation methods. Our results disclose the hitherto overlooked edge activity of 2D materials induced by heteroatom doping that will provide perspectives for preparing next-generation 2D catalysts.

摘要

成分调制和边缘富集是调控二维(2D)材料电子结构和催化活性的既定方法。据信,杂原子通过激活二维晶体化学惰性的基面来提高催化性能。然而,边缘和基面具有本质上不同的电子态,且掺杂剂如何影响边缘活性仍不明确。在此,我们通过片上电催化微器件监测磷掺杂的MoS(P-MoS)纳米片的析氢反应(HER)性能,为该问题提供了机理见解。磷掺杂后,MoS纳米片被催化激活,更重要的是,其边缘的HER活性高于基面。原位输运测量表明,P-MoS析氢性能的提高源于本征催化活性而非电荷转移。密度泛函理论计算表明,P-MoS的边缘位点在能量上更有利于析氢反应。这一发现指导了边缘主导的P-MoS的合理设计,实现了约30 mV的极小起始电位和48 mV/dec的塔菲尔斜率,与其他活化方法相比具有基准优势。我们的结果揭示了杂原子掺杂诱导的二维材料迄今被忽视的边缘活性,这将为制备下一代二维催化剂提供思路。

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