Zhao Shan, Du Xinyuan, Pang Jincong, Wu Haodi, Song Zihao, Zheng Zhiping, Xu Ling, Tang Jiang, Niu Guangda
Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China.
Optical Valley Laboratory, Wuhan, 430074, China.
Front Optoelectron. 2022 Oct 31;15(1):43. doi: 10.1007/s12200-022-00044-1.
Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10 A/cm for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (J) and the generation-recombination current (J). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.
金属卤化物钙钛矿（MHP）在X射线和γ射线检测方面表现出优异性能。大多数研究集中于提高单像素MHP探测器的灵敏度。然而，很少有工作关注暗电流，而暗电流对于后端电路集成至关重要。在此，对于集成在像素电路上的X射线成像器，暗电流要求被定量评估低至10 A/cm²。此外，通过半导体器件分析和模拟，我们揭示出厚钙钛矿X射线探测器的主要电流成分是热电子发射电流（Jth）和产生-复合电流（Jgr）。厚探测器中p-n结典型的观测到的失效是由能带失配和界面缺陷导致的高产生-复合电流引起的。这项工作为高灵敏度和低暗电流钙钛矿X射线探测器的设计提供了深入见解。
