Chen Zhenyao, Mei Junjie, Zhang Ye, Tan Jishu, Xiong Qing, Chen Changhong
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Front Optoelectron. 2021 Dec;14(4):445-449. doi: 10.1007/s12200-019-0957-7. Epub 2019 Dec 5.
Here we present a graphene photodetector of which the graphene and structural system infrared absorptions are enhanced by interface phonon polariton (IPhP) coupling. IPhPs are supported at the SiC/AlN interface of device structure and used to excite interband transitions of the intrinsic graphene under gated-field tuning. The simulation results show that at normal incidence the absorbance of graphene or system reaches up to 43% or closes to unity in a mid-infrared frequency range. In addition, we found the peak-absorption frequency is mainly decided by the AlN thickness, and it has a red-shift as the thickness decreases. This structure has great application potential in graphene infrared detection technology.
在此，我们展示了一种石墨烯光电探测器，其石墨烯和结构系统的红外吸收通过界面声子极化激元（IPhP）耦合得到增强。IPhP在器件结构的SiC/AlN界面得到支持，并用于在栅极电场调谐下激发本征石墨烯的带间跃迁。模拟结果表明，在垂直入射时，石墨烯或系统的吸光度在中红外频率范围内高达43%或接近1。此外，我们发现峰值吸收频率主要由AlN厚度决定，并且随着厚度减小会发生红移。这种结构在石墨烯红外探测技术中具有巨大的应用潜力。
