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掺杂 Ta 提高 BaNbTaMoO 的氧离子电导率。

Enhanced Oxide Ion Conductivity by Ta Doping of BaNbTaMoO.

机构信息

Department of Chemistry, University of Aberdeen, Meston Walk, AberdeenAB24 3UE, U.K.

ISIS Facility, STFC Rutherford Appleton Laboratory, Harwell Campus, DidcotOX11 0QX, U.K.

出版信息

Inorg Chem. 2023 Jan 30;62(4):1628-1635. doi: 10.1021/acs.inorgchem.2c03943. Epub 2023 Jan 17.

Abstract

Significant oxide ion conductivity has previously been reported for the BaM'M″O family (M' = Nb, V; M″ = Mo, W) of cation-deficient hexagonal perovskite derivatives. These systems exhibit considerable structural disorder and competitive occupation of two distinct oxygen positions (O3 site and O2 site), enabling two-dimensional (2D) ionic conductivity within the plane of the structure; higher occupation of the tetrahedral O3 site vs the octahedral O2 site is known to be a major factor that promotes oxide ion conductivity. Previous chemical doping studies have shown that substitution of small amounts of the M' or M″ ions can result in significant changes to both the structure and ionic conductivity. Here, we report on the electrical and structural properties of the BaNbTaMoO series ( = 0.00, 0.025, 0.050, 0.100). AC impedance measurements show that substitution of Nb with Ta leads to a significant increase in low-temperature (<500 °C) conductivity for = 0.1. Analysis of neutron and X-ray diffraction (XRD) data confirms that there is a decrease in the M1O/M1O ratio upon increasing from 0 to 0.1 in BaNbTaMoO, which would usually coincide with a lowering in the conductivity. However, neutron diffraction results show that Ta doping causes an increase in the oxide ion conductivity as a result of longer M1-O3 bonds and increased polyhedral distortion.

摘要

先前已有报道称,BaM'M″O 型(M'=Nb、V;M″=Mo、W)阳离子缺位六方钙钛矿衍生物具有显著的氧离子电导率。这些体系表现出相当大的结构无序性和两个不同氧位置(O3 位和 O2 位)的竞争占据,从而在结构的平面内实现二维(2D)离子导电性;四面体 O3 位的占据比八面体 O2 位更高,这是促进氧离子电导率的主要因素。先前的化学掺杂研究表明,少量取代 M'或 M″离子可以显著改变结构和离子电导率。在这里,我们报告了 BaNbTaMoO 系列( = 0.00、0.025、0.050、0.100)的电学和结构性质。交流阻抗测量表明,用 Ta 取代 Nb 会导致 = 0.1 时低温(<500°C)电导率显著增加。对中子和 X 射线衍射(XRD)数据的分析证实,在 BaNbTaMoO 中,随 从 0 增加到 0.1 时,M1O/M1O 比值降低,这通常与电导率降低相一致。然而,中子衍射结果表明,Ta 掺杂会导致氧离子电导率增加,这是由于更长的 M1-O3 键和增加的多面体变形。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/70f0/9890478/6c5d7f7c7449/ic2c03943_0002.jpg

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