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基于第 10 族过渡金属二硫属化物的光电探测器研究进展。

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides.

机构信息

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China.

Physics Department, Lancaster University, Lancaster, LA14YB, UK.

出版信息

Small. 2023 Apr;19(16):e2207641. doi: 10.1002/smll.202207641. Epub 2023 Jan 19.

Abstract

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

摘要

快速发展的第 10 族过渡金属二卤代物(TMDCs)具有显著的电子、光学和机械性能,使它们成为先进光电子应用的有前途的候选材料。与大多数 TMDCs 半导体相比,第 10 族-TMDCs 具有独特的结构、窄带隙和有影响力的物理性质,这激发了宽带光探测器的发展,特别是红外光探测器。本综述介绍了基于传统二维 TMDCs 的宽带光探测器的最新研究进展。它主要从晶格结构和合成技术的角度关注了第 10 族 TMDCs 的最新发展。综述了第 10 族 TMDCs 及其与不同维度材料的异质结构的最新进展宽带光探测器。此外,本综述还介绍了第 10 族 TMDCs 在纳米电子学和光电子学领域的最新应用。最后,总结了结论和展望,为基于第 10 族 TMDCs 的下一代宽带光探测器提供了思路。

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