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基于二维二硫化钼的波导耦合光探测器

Waveguide-Coupled Light Photodetector Based on Two-Dimensional Molybdenum Disulfide.

作者信息

Hlushchenko Daria, Olszewski Jacek, Martynkien Tadeusz, Łukomski Michał, Gemza Karolina, Karasiński Pawel, Zięba Magdalena, Baraniecki Tomasz, Duda Łukasz, Bachmatiuk Alicja, Guzik Małgorzata, Kudrawiec Robert

机构信息

Łukasiewicz Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland.

Faculty of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.

出版信息

ACS Appl Mater Interfaces. 2024 Jun 5;16(22):28874-28885. doi: 10.1021/acsami.4c04854. Epub 2024 May 25.

DOI:10.1021/acsami.4c04854
PMID:38795034
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11163399/
Abstract

The integration of transition metal dichalcogenides with photonic structures such as sol-gel SiO:TiO optical waveguides (WGs) makes possible the fabrication of photonic devices with the desired characteristics in the visible spectral range. In this study, we propose and experimentally demonstrate a MoS-based photodetector integrated with a sol-gel SiO:TiO WG. Based on the spectroscopic measurements performed for our device, we concluded that the light entering the WG is almost completely channeled out from the WG and absorbed by the MoS flake, which is deposited on the WG. Therefore, this device works as a photodetector. The light coupling into the MoS region in this device construction is due to the high contrast of refractive index between the van der Waals crystal and the sol-gel WG, which is ∼4 and ∼1.8, respectively. The obtained MoS-based photodetectors exhibit a photoresponsivity of 0.3 A W (-type MoS) and 7.53 mA W (-type MoS) at a bias voltage of 2 V. These results reveal great potential in the integration of sol-gel WGs with van der Waals crystals in optoelectronic applications.

摘要

过渡金属二硫属化物与诸如溶胶 - 凝胶SiO:TiO光波导（WG）等光子结构的集成，使得在可见光谱范围内制造具有所需特性的光子器件成为可能。在本研究中，我们提出并通过实验证明了一种集成了溶胶 - 凝胶SiO:TiO WG的基于MoS的光电探测器。基于对我们器件进行的光谱测量，我们得出结论，进入WG的光几乎完全从WG中导出并被沉积在WG上的MoS薄片吸收。因此，该器件用作光电探测器。在这种器件结构中，光耦合到MoS区域是由于范德华晶体与溶胶 - 凝胶WG之间的折射率具有高对比度，分别约为4和1.8。所获得的基于MoS的光电探测器在2 V偏置电压下表现出0.3 A W（-型MoS）和7.53 mA W（-型MoS）的光响应度。这些结果揭示了溶胶 - 凝胶WG与范德华晶体在光电应用集成方面的巨大潜力。

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