Shao Zhibin, Zhang Zongyuan, Yuan Hui, Sun Haigen, Cao Yan, Zhang Xin, Li Shaojian, Gedeon Habakubaho, Xiang Tao, Xue Qi-Kun, Pan Minghu
School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.
Sci Bull (Beijing). 2018 Oct 30;63(20):1332-1337. doi: 10.1016/j.scib.2018.09.006. Epub 2018 Sep 13.
Recent experimental and theoretical studies of single-layer FeSe film grown on SrTiO have revealed interface enhanced superconductivity, which opens up a pathway to promote the superconducting transition temperature. Here, to investigate the role of SrTiO substrate in epitaxial superconducting film, we grew a conventional superconductor β-Sn (bulk T ∼ 3.72 K) onto SrTiO substrate by molecular beam epitaxy. By employing scanning tunneling microscope and spectroscopic measurements, an enhanced T of 8.2 K is found for epitaxial β-Sn islands, deduced by fitting the temperature dependence of the gap values using the BCS formula. The observed interfacial charge injection and enhanced electron-phonon coupling are responsible for this T enhancement. Moreover, the critical field of 8.3 T exhibits a tremendous increase due to the suppression of the vortex formation. Therefore, the coexistence of enhanced superconductivity and high critical field of Sn islands demonstrates a feasible and effective route to improve the superconductivity by growing the islands of conventional superconductors on perovskite-type titanium oxide substrates.
最近对生长在SrTiO上的单层FeSe薄膜的实验和理论研究揭示了界面增强超导性,这为提高超导转变温度开辟了一条途径。在此,为了研究SrTiO衬底在外延超导薄膜中的作用,我们通过分子束外延在SrTiO衬底上生长了一种传统超导体β-Sn(体超导转变温度T ∼ 3.72 K)。通过使用扫描隧道显微镜和光谱测量,通过用BCS公式拟合能隙值的温度依赖性,发现外延β-Sn岛的超导转变温度提高到了8.2 K。观察到的界面电荷注入和增强的电子-声子耦合是导致这种超导转变温度提高的原因。此外,由于涡旋形成受到抑制,8.3 T的临界场显著增加。因此,Sn岛增强超导性和高临界场的共存证明了通过在钙钛矿型钛氧化物衬底上生长传统超导体岛来改善超导性是一条可行且有效的途径。