Lv Danhui, Wang Hulian, Zhu Dancheng, Lin Jie, Yin Guoli, Lin Fang, Zhang Ze, Jin Chuanhong
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China; Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA.
Sci Bull (Beijing). 2017 Jun 30;62(12):846-851. doi: 10.1016/j.scib.2017.05.016. Epub 2017 May 15.
The microscopic process of oxidative etching of two-dimensional molybdenum disulfide (2D MoS) at an atomic scale is investigated using a correlative transmission electron microscope (TEM)-etching study. MoS flakes on graphene TEM grids are precisely tracked and characterized by TEM before and after the oxidative etching. This allows us to determine the structural change with an atomic resolution on the edges of the domains, of well-oriented triangular pits and along the grain boundaries. We observe that the etching mostly starts from the open edges, grain boundaries and pre-existing atomic defects. A zigzag Mo edge is assigned as the dominant termination of the triangular pits, and profound terraces and grooves are observed on the etched edges. Based on the statistical TEM analysis, we reveal possible routes for the kinetics of the oxidative etching in 2D MoS, which should also be applicable for other 2D transition metal dichalcogenide materials like MoSe and WS.
利用相关透射电子显微镜(TEM)蚀刻研究,在原子尺度上研究了二维二硫化钼(2D MoS)的氧化蚀刻微观过程。在氧化蚀刻前后,通过TEM对石墨烯TEM网格上的MoS薄片进行精确跟踪和表征。这使我们能够在原子分辨率下确定畴边缘、取向良好的三角形坑以及沿晶界的结构变化。我们观察到蚀刻主要从开放边缘、晶界和预先存在的原子缺陷处开始。锯齿状Mo边缘被确定为三角形坑的主要终止形式,并且在蚀刻边缘观察到了深刻的台阶和沟槽。基于统计TEM分析,我们揭示了2D MoS中氧化蚀刻动力学的可能途径,这也应适用于其他二维过渡金属二卤化物材料,如MoSe和WS。