Asokan Vijayshankar, Zhu Dancheng, Huang Wei, Wang Hulian, Gao Wandong, Zhang Ze, Jin Chuanhong
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China.
Environmental Inorganic Chemistry, Department of Chemistry and Chemical Engineering, Chalmers University of Technology, Gothenburg, 41296, Sweden.
Sci Rep. 2018 May 9;8(1):7396. doi: 10.1038/s41598-018-25796-9.
In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO) has been used as a source for 'W' while 'Mo' has been derived from Mo based substrate. Different experimental parameters were used in this experiment. Higher gas flow rate decreases the size of the sample flake and on other side increases the dopant concentrations. The interaction mechanism between Mo, S, W and oxygen (O) have been explored. The influence of oxygen seems to be not avoidable completely which also imposes effective growth condition for the reaction of Mo with incoming sulfur atoms. The difference in the migration energies of Mo, WO, S clusters on the graphene and the higher reactivity of Mo clusters over other possibly formed atomic clusters on the graphene leads to the growth of W doped MoS monolayers. Formation of MoS monolayer and the nature of edge doping of 'W' is explained well with the crystal model using underlying nucleation principles. We believe our result provide a special route to prepare W doped MoS on graphene substrate in the future.
在本研究中，已开展了一种新方法，即在化学气相沉积（CVD）装置中，在转移至透射电子显微镜（TEM）网格上的石墨烯上生长钨（W）掺杂的二硫化钼（MoS）。三氧化钨（WO）被用作“W”的源，而“Mo”则源自基于Mo的衬底。本实验使用了不同的实验参数。较高的气体流速会减小样品薄片的尺寸，另一方面会增加掺杂剂浓度。已探究了Mo、S、W与氧（O）之间的相互作用机制。氧的影响似乎无法完全避免，这也为Mo与进入的硫原子的反应施加了有效的生长条件。Mo、WO、S团簇在石墨烯上的迁移能差异以及Mo团簇相对于石墨烯上其他可能形成的原子团簇的更高反应活性导致了W掺杂的MoS单层的生长。利用潜在的成核原理，通过晶体模型很好地解释了MoS单层的形成以及“W”的边缘掺杂性质。我们相信我们的结果为未来在石墨烯衬底上制备W掺杂的MoS提供了一条特殊途径。
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