Park Do-Hyun, Lee Hyo Chan
Division of Quantum Phase and Devices, Konkuk University, Seoul 05029, Republic of Korea.
Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea.
Micromachines (Basel). 2023 Jan 4;14(1):140. doi: 10.3390/mi14010140.
The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488−1550 nm).
基于各种二维（2D）材料的短波红外光电探测器的发展近来备受关注，因为这些器件能够在室温下工作。尽管具有II型能带排列的二维材料范德华异质结构在短波红外光电探测器中具有巨大的应用潜力，但仍需要开发具有高光响应性的光电探测器。在本研究中，我们使用单层二硫化钼/单层碲化钼范德华异质结构研究了石墨烯的光门控。通过在石墨烯上堆叠二硫化钼/碲化钼，我们制造了一种宽带光电探测器，该探测器在宽波长范围（488 - 1550 nm）内表现出高光响应性（>100 mA/W）和低暗电流（60 nA）。
