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空位缺陷含量对立方和六方碳化硅/铝界面互扩散的影响:分子动力学研究。

Effect of Vacancy Defect Content on the Interdiffusion of Cubic and Hexagonal SiC/Al Interfaces: A Molecular Dynamics Study.

机构信息

Department of Mechanical Engineering, Ferdowsi University of Mashhad, Mashhad 91779-48974, Iran.

Institute of Fundamental Technological Research, Polish Academy of Sciences, Pawińskiego 5B, 02-106 Warsaw, Poland.

出版信息

Molecules. 2023 Jan 11;28(2):744. doi: 10.3390/molecules28020744.

Abstract

The mechanical properties of ceramic-metal nanocomposites are greatly affected by the equivalent properties of the interface of materials. In this study, the effect of vacancy in SiC on the interdiffusion of SiC/Al interfaces is investigated using the molecular dynamics method. The SiC reinforcements exist in the whisker and particulate forms. To this end, cubic and hexagonal SiC lattice polytypes with the Si- and C-terminated interfaces with Al are considered as two samples of metal matrix nanocomposites. The average main and cross-interdiffusion coefficients are determined using a single diffusion couple for each system. The interdiffusion coefficients of the defective SiC/Al are compared with the defect-free SiC/Al system. The effects of temperature, annealing time, and vacancy on the self- and interdiffusion coefficients are investigated. It is found that the interdiffusion of Al in SiC increases with the increase in temperature, annealing time, and vacancy.

摘要

陶瓷-金属纳米复合材料的力学性能受材料界面等效性能的影响很大。本研究采用分子动力学方法研究了 SiC 空位对 SiC/Al 界面互扩散的影响。SiC 增强体以晶须和颗粒两种形式存在。为此,考虑了具有 Si 和 C 端界面的立方和六方 SiC 晶格多型体作为两种金属基质纳米复合材料的样本。通过对每个体系的单个扩散偶来确定平均主扩散和交叉扩散系数。将有缺陷的 SiC/Al 的互扩散系数与无缺陷的 SiC/Al 体系进行了比较。研究了温度、退火时间和空位对自扩散和互扩散系数的影响。结果表明,随着温度、退火时间和空位的增加,Al 在 SiC 中的互扩散增加。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/245f/9861286/0795fff8f5e9/molecules-28-00744-g001.jpg

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