Dirko Vladimir V, Lozovoy Kirill A, Kokhanenko Andrey P, Kukenov Olzhas I, Korotaev Alexander G, Voitsekhovskii Alexander V
Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia.
Nanomaterials (Basel). 2023 Jan 4;13(2):231. doi: 10.3390/nano13020231.
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered.
本文介绍了在很宽的温度范围内，对锗在具有（111）晶体取向的硅上进行外延生长过程的研究结果。利用反射高能电子衍射方法，测定了在250至700°C范围内，从7×7超结构到5×5超结构的转变阶段持续时间的温度依赖性，以及从二维生长到三维生长转变的临界厚度值。首次表明，从7×7超结构到5×5超结构的转变时间取决于外延生长温度。还考虑了到目前为止关注不足的低温合成区域。
