Tong Yongfeng, Bouaziz Meryem, Oughaddou Hamid, Enriquez Hanna, Chaouchi Karine, Nicolas François, Kubsky Stefan, Esaulov Vladimir, Bendounan Azzedine
Synchrotron SOLEIL - L'Orme des Merisiers Saint-Aubin - BP 48, 91192 Gif-sur-Yvette Cedex France
Institut des Sciences Moléculaires d'Orsay, UMR 8214, Université Paris-Sud, Université Paris-Saclay 91405 Orsay Cedex France.
RSC Adv. 2020 Aug 20;10(51):30934-30943. doi: 10.1039/d0ra04346j. eCollection 2020 Aug 17.
This work relates to direct synthesis of the two-dimensional (2D) transition metal dichalchogenide (TMD) PtSe using an original method based on chemical deposition during immersion of a Pt(111) surface into aqueous NaSe solution. Annealing of the sample induces significant modifications in the structural and electronic properties of the resulting PtSe film. We report systematic investigations of temperature dependent phase transitions by combining synchrotron based high-resolution X-ray photoemission (XPS), low temperature scanning tunnelling microscopy (LT-STM) and low energy electron diffraction (LEED). From the STM images, a phase transition from TMD 2H-PtSe to PtSe alloy monolayer structure is observed, in agreement with the LEED patterns showing a transition from (4 × 4) to (√3 × √3)R30° and then to a (2 × 2) superstructure. This progressive evolution of the surface reconstruction has been monitored by XPS through systematic de-convolution of the Pt4f and Se3d core level peaks at different temperatures. The present work provides an alternative method for the large scale fabrication of 2D transition metal dichalchogenide films.
这项工作涉及使用一种基于化学沉积的原始方法直接合成二维(2D)过渡金属二硫属化物(TMD)PtSe,该方法是将Pt(111)表面浸入NaSe水溶液中。对样品进行退火会使所得PtSe薄膜的结构和电子特性发生显著变化。我们通过结合基于同步加速器的高分辨率X射线光电子能谱(XPS)、低温扫描隧道显微镜(LT-STM)和低能电子衍射(LEED),对温度依赖性相变进行了系统研究。从STM图像中,可以观察到从TMD 2H-PtSe到PtSe合金单层结构的相变,这与LEED图案一致,LEED图案显示从(4×4)转变为(√3×√3)R30°,然后转变为(2×2)超结构。通过在不同温度下对Pt4f和Se3d核心能级峰进行系统的去卷积,XPS监测了表面重构的这种渐进演变。目前的工作为大规模制备二维过渡金属二硫属化物薄膜提供了一种替代方法。