Wang Kun, He Qiang, Yang Deren, Pi Xiaodong
State Key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311215, China.
Nanomaterials (Basel). 2023 Jan 9;13(2):277. doi: 10.3390/nano13020277.
Erbium-doped silicon (Er-doped Si) materials hold great potential for advancing Si photonic devices. For Er-doped Si, the efficiency of energy transfer () from Si to Er is crucial. In order to achieve high , we used nonthermal plasma to synthesize Si quantum dots (QDs) hyperdoped with Er at the concentration of 1% (i.e., ~5 × 10 cm). The QD surface was subsequently modified by hydrosilylation using 1-dodecene. The Er-hyperdoped Si QDs emitted near-infrared (NIR) light at wavelengths of ~830 and ~1540 nm. An ultrahigh (93%) was obtained owing to the effective energy transfer from Si QDs to Er, which led to the weakening of the NIR emission at ~830 nm and the enhancement of the NIR emission at ~1540 nm. The coupling constant () between Si QDs and Er was comparable to or greater than 1.8 × 10 cm·s. The temperature-dependent photoluminescence and excitation rate of Er-hyperdoped Si QDs indicate that strong coupling between Si QDs and Er allows Er to be efficiently excited.
掺铒硅（Er掺杂Si）材料在推进硅光子器件方面具有巨大潜力。对于Er掺杂Si，从Si到Er的能量转移效率（）至关重要。为了实现高，我们使用非热等离子体合成了铒超掺杂浓度约为1%（即~5×10 cm）的硅量子点（QDs）。随后使用1-十二碳烯通过硅氢化反应对量子点表面进行修饰。铒超掺杂的硅量子点在波长约为830和1540 nm处发射近红外（NIR）光。由于从硅量子点到铒的有效能量转移，获得了超高的（约93%），这导致830 nm附近的近红外发射减弱，而1540 nm附近的近红外发射增强。硅量子点与铒之间的耦合常数（）与1.8×10 cm·s相当或更大。铒超掺杂硅量子点的温度依赖光致发光和激发速率表明，硅量子点与铒之间的强耦合使得铒能够被有效激发。
