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深度相关后处理降低打印介观钙钛矿太阳能电池的电压损失。

Depth-Dependent Post-Treatment for Reducing Voltage Loss in Printable Mesoscopic Perovskite Solar Cells.

机构信息

Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.

出版信息

Adv Sci (Weinh). 2023 Mar;10(9):e2206331. doi: 10.1002/advs.202206331. Epub 2023 Jan 22.

Abstract

The printable mesoscopic perovskite solar cells consisting of a double layer of metal oxides covered by a porous carbon film have attracted attention due to their industrialization advantages. However, the tens-of-micrometer thickness of the triple scaffold leads to a challenge for perovskite to crystallize and for the charge carriers to separate and travel to the electrode, which limits the open circuit voltage (V ) of such devices. In this work, a depth-dependent post-treatment strategy is demonstrated to synergistically passivate defects and tune interfacial energy band alignment. Two thiophene derivatives, namely 3-chlorothiophene (3-CT) and 3-thiophene ethylenediamine (3-TEA), are selected for the post-treatment. Energy-dispersive X-ray spectroscopy proves that 3-CT is uniformly distributed throughout the triple scaffold and effectively passivates the defects of the bulky perovskite, while 3-TEA reacts rapidly with the loose perovskite in the carbon layer to form 2D perovskite, forming a type II energy band alignment at the perovskite/carbon interface. As a result, the defect-assisted recombination is suppressed and the interfacial energy band is regulated, increasing the V to 1012 mV. The PCE of the devices is enhanced from 16.26% to 18.49%. This depth-dependent post-treatment strategy takes advantage of the unique structure and provides a new insight for reducing the voltage loss.

摘要

由双层金属氧化物覆盖多孔碳膜组成的可打印介观钙钛矿太阳能电池因其工业化优势而受到关注。然而,三层支架的数十微米厚度给钙钛矿的结晶以及载流子的分离和传输到电极带来了挑战,这限制了此类器件的开路电压(V )。在这项工作中,展示了一种深度相关的后处理策略,以协同钝化缺陷和调整界面能带排列。选择两种噻吩衍生物,即 3-氯噻吩(3-CT)和 3-噻吩乙二胺(3-TEA)进行后处理。能谱证明 3-CT 均匀分布在三层支架中,有效地钝化了大块钙钛矿的缺陷,而 3-TEA 与碳层中松散的钙钛矿快速反应,形成二维钙钛矿,在钙钛矿/碳界面形成 II 型能带排列。因此,抑制了缺陷辅助的复合,调节了界面能带,将 V 提高到 1012 mV。器件的 PCE 从 16.26%提高到 18.49%。这种深度相关的后处理策略利用了独特的结构,为降低电压损耗提供了新的思路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/dfc1/10037989/f1d9fea7d99c/ADVS-10-2206331-g006.jpg

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