Hu Zhijian, Bao Yanjun, Li Ziwei, Gong Yongji, Feng Rui, Xiao Yingdong, Wu Xiaochun, Zhang Zhaohui, Zhu Xing, Ajayan Pulickel M, Fang Zheyu
Key Laboratory of Nanoscale Measurement and Standardization National Center for Nanoscience and Technology, Beijing 100190, China.
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University; Collaborative Innovation Center of Quantum Matter, Beijing 100871, China.
Sci Bull (Beijing). 2017 Jan 15;62(1):16-21. doi: 10.1016/j.scib.2016.11.002. Epub 2016 Nov 21.
Heterostructures from two-dimensional transition-metal dichalcogenides MX have emerged as a hot topic in recent years due to their various fascinating properties. Here, we investigated the temperature dependent Raman and photoluminescence (PL) spectra in vertical stacked WS/MoS monolayer heterostructures. Our result shows that both E and A modes of WS and MoS vary linearly with temperature increasing from 300 to 642K. The PL measurement also reveals strong temperature dependencies of the PL intensity and peak position. The activation energy of the thermal quenching of the PL emission has been found to be equal to 69.6meV. The temperature dependence of the peak energy well follows the band-gap shrinkage of bulk semiconductor.
近年来，由二维过渡金属二硫属化物MX构成的异质结构因其各种迷人的特性而成为一个热门话题。在此，我们研究了垂直堆叠的WS/MoS单层异质结构中随温度变化的拉曼光谱和光致发光（PL）光谱。我们的结果表明，随着温度从300K升高到642K，WS和MoS的E模式和A模式均呈线性变化。PL测量还揭示了PL强度和峰值位置对温度有很强的依赖性。已发现PL发射热猝灭的激活能等于69.6meV。峰值能量的温度依赖性很好地遵循了体半导体的带隙收缩规律。
