Yu Yankun, Zhang Dejian, Nagayama Gyoko
Graduate School of Engineering, Kyushu Institute of Technology, Sensui 1-1, Tobata, Kitakyushu, Fukuoka 804-8550, Japan.
School of Mechanical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Daxue Road 3501, Changqing, Jinan, Shandong 250316, China.
Soft Matter. 2023 Feb 8;19(6):1249-1257. doi: 10.1039/d2sm01406h.
While partial wetting at nano-/microstructured surfaces can be described using the intermediate wetting state between the Cassie-Baxter and Wenzel states, the limitations of the partial wetting model remain unclear. In this study, we performed surface free energy analysis at a microstructured Si-water interface from both theoretical and experimental viewpoints. We experimentally measured the water contact angle on microstructured Si surfaces with square holes and compared the measured values with theoretical predictions. Furthermore, the surface free energy was analyzed using the effective wetting area estimated from the measured contact angle and electrochemical impedance spectroscopy results. We verified the validity of the partial wetting model for fabricated Si surfaces with a hole aperture less than 230 μm and a hole height of 12 μm, and for < 400 μm, = 40 μm. The model was found to be applicable to microstructured Si surfaces with / < 10.
虽然纳米/微结构化表面的部分润湿可以用Cassie-Baxter状态和Wenzel状态之间的中间润湿状态来描述，但部分润湿模型的局限性仍不明确。在本研究中，我们从理论和实验两个角度对微结构化硅-水界面进行了表面自由能分析。我们通过实验测量了具有方孔的微结构化硅表面上的水接触角，并将测量值与理论预测值进行了比较。此外，利用从测量的接触角和电化学阻抗谱结果估计的有效润湿面积对表面自由能进行了分析。我们验证了部分润湿模型对于孔径小于230μm、孔高为12μm以及对于<400μm、=40μm的制备硅表面的有效性。发现该模型适用于/ < 10的微结构化硅表面。
