Opt Lett. 2023 Feb 1;48(3):582-585. doi: 10.1364/OL.478212.
We demonstrate a method to emulate the optical performance of silicon photonic devices fabricated using advanced deep-ultraviolet lithography (DUV) processes on a rapid-prototyping electron-beam lithography process. The method is enabled by a computational lithography predictive model generated by processing SEM image data of the DUV lithography process. We experimentally demonstrate the emulation method's accuracy on integrated silicon Bragg grating waveguides and grating-based, add-drop filter devices, two devices that are particularly susceptible to DUV lithography effects. The emulation method allows silicon photonic device and system designers to experimentally observe the effects of DUV lithography on device performance in a low-cost, rapid-prototyping, electron-beam lithography process to enable a first-time-right design flow.
我们展示了一种方法，可以在快速原型电子束光刻工艺上模拟使用先进深紫外光刻 (DUV) 工艺制造的硅光子器件的光学性能。该方法通过处理 DUV 光刻工艺的 SEM 图像数据生成的计算光刻预测模型得以实现。我们通过实验验证了该仿真方法在集成硅布拉格光栅波导和基于光栅的添加/删除滤波器器件上的准确性，这两种器件特别容易受到 DUV 光刻效应的影响。该仿真方法使硅光子器件和系统设计人员能够在低成本、快速原型、电子束光刻工艺中实验观察 DUV 光刻对器件性能的影响，从而实现一次正确的设计流程。
