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基于300毫米绝缘体上硅平台和193纳米深紫外光刻技术的双波段光纤芯片光栅耦合器

Dual-band fiber-chip grating coupler in a 300 mm silicon-on-insulator platform and 193 nm deep-UV lithography.

作者信息

González-Andrade David, Pérez-Galacho Diego, Montesinos-Ballester Miguel, Le Roux Xavier, Cassan Eric, Marris-Morini Delphine, Cheben Pavel, Vulliet Nathalie, Monfray Stephane, Boeuf Frédéric, Vivien Laurent, Velasco Aitor V, Alonso-Ramos Carlos

出版信息

Opt Lett. 2021 Feb 1;46(3):617-620. doi: 10.1364/OL.414860.

DOI:10.1364/OL.414860
PMID:33528423
Abstract

Surface grating couplers are fundamental building blocks for coupling the light between optical fibers and integrated photonic devices. However, the operational bandwidth of conventional grating couplers is intrinsically limited by their wavelength-dependent radiation angle. The few dual-band grating couplers that have been experimentally demonstrated exhibit low coupling efficiencies and rely on complex fabrication processes. Here we demonstrate for the first time, to the best of our knowledge, the realization of an efficient dual-band grating coupler fabricated using 193 nm deep-ultraviolet lithography for 10 Gbit symmetric passive optical networks. The footprint of the device is 17×10µ. We measured coupling efficiencies of -4.9 and -5.2 with a 3-dB bandwidth of 27 and 56 nm at the wavelengths of 1270 and 1577 nm, corresponding to the upstream and downstream channels, respectively.

摘要

表面光栅耦合器是用于在光纤和集成光子器件之间耦合光的基本构建模块。然而,传统光栅耦合器的工作带宽本质上受到其波长依赖辐射角的限制。少数已通过实验证明的双波段光栅耦合器表现出低耦合效率,并且依赖复杂的制造工艺。据我们所知,在此我们首次展示了使用193纳米深紫外光刻技术为10 Gbit对称无源光网络制造的高效双波段光栅耦合器的实现。该器件的占地面积为17×10µ。我们分别在1270纳米和1577纳米波长处测量到耦合效率为-4.9和-5.2,对应于上游和下游通道,3分贝带宽分别为27纳米和56纳米。

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