Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, United States of America.
Nanotechnology. 2023 Feb 17;34(18). doi: 10.1088/1361-6528/acb7fc.
In this work, the endurance characteristics of Al-doped HfO(HAO)-based metal-ferroelectric-metal (MFM) capacitors (which were annealed at 1000 °C) with various doping concentrations were investigated. The doping concentration was optimized for the high annealing temperature (1000 °C) process. To investigate the impact of cycling pulses on the endurance characteristics of HAO-based MFM capacitor, the rise/fall time () and hold time () for the cycling pulses were varied. Moreover, by adopting the recoverable fatigue process, the endurance characteristics under repetitive wake-up/fatigue processes were studied. The HAO capacitors achieved the remnant polarization (2P) of 23.767C cmat pristine state under the high annealing temperature. Furthermore, it was demonstrated that the endurance characteristics (∼10cycles) of the HAO capacitors were comparable to them of other HfO-based ferroelectric capacitors. Lastly but not least, it turned out that the amount of oxygen and oxygen vacancies in the HAO thin film was dependent of doping concentrations for the film. The impact of oxygen and oxygen vacancies was quantitatively analyzed, in detail, with TEM, XPS and GIXRD analysis.
在这项工作中，研究了不同掺杂浓度的掺铝 HfO（HAO）基金属-铁电体-金属（MFM）电容器（在 1000°C 下退火）的耐久性特性。为了优化高温退火（1000°C）工艺中的掺杂浓度，优化了掺杂浓度。为了研究循环脉冲对 HAO 基 MFM 电容器耐久性特性的影响，改变了循环脉冲的上升/下降时间（）和保持时间（）。此外，通过采用可恢复的疲劳过程，研究了在重复唤醒/疲劳过程下的耐久性特性。在高退火温度下，HAO 电容器在原始状态下实现了 23.767C cm 的剩余极化（2P）。此外，还证明了 HAO 电容器的耐久性特性（约 10 个循环）可与其他基于 HfO 的铁电电容器相媲美。最后但并非最不重要的是，事实证明，HAO 薄膜中的氧和氧空位的数量取决于薄膜的掺杂浓度。通过 TEM、XPS 和 GIXRD 分析，详细分析了氧和氧空位的影响。
