Choi Yejoo, Shin Jaemin, Min Jinhong, Moon Seungjun, Chu Daeyoung, Han Donghwan, Shin Changhwan
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Semiconductor R&D Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea.
Sci Rep. 2024 Nov 21;14(1):28912. doi: 10.1038/s41598-024-80523-x.
The effect of W and WO electrodes on the ferroelectric characteristics of HZO (Zr-doped HfO)-based MFM (metal-ferroelectric-metal) capacitors was investigated. During the deposition of tungsten, the W electrode was formed using only Ar gas, while the WO electrode was formed using a mixture of Ar and O gases. The W-based MFM capacitors exhibited superior remnant polarization (2P of 107.9 µC/cm at 700 C) compared to the WO-based capacitors; however, their endurance performance was degraded. In contrast, the WO-based capacitors showed endurance performance enhanced by three orders of magnitude due to the oxygen-rich reservoir effect. The oxygen introduced during the deposition of WO prevented the oxygen scavenging effect of tungsten. Consequently, excessive generation of oxygen vacancies in the HZO layer was suppressed, resulting in improved endurance performance. These results were quantitatively confirmed through TEM, XPS, and XRD analyses.
研究了W和WO电极对基于HZO（掺Zr的HfO）的MFM（金属-铁电体-金属）电容器铁电特性的影响。在钨沉积过程中，仅使用Ar气形成W电极，而使用Ar气和O气的混合物形成WO电极。与基于WO的电容器相比，基于W的MFM电容器表现出优异的剩余极化（在700℃时2P为107.9µC/cm²）；然而，它们的耐久性性能下降。相反，由于富氧存储效应，基于WO的电容器的耐久性性能提高了三个数量级。WO沉积过程中引入的氧阻止了钨的氧清除效应。因此，抑制了HZO层中氧空位的过度产生，从而提高了耐久性性能。通过TEM、XPS和XRD分析对这些结果进行了定量证实。
