Pseudospin-selective Floquet band engineering in black phosphorus.

Time-periodic light field has emerged as a control knob for manipulating quantum states in solid-state materials, cold atoms and photonic systems through hybridization with photon-dressed Floquet states in the strong-coupling limit, dubbed Floquet engineering. Such interaction leads to tailored properties of quantum materials, for example, modifications of the topological properties of Dirac materials and modulation of the optical response. Despite extensive research interests over the past decade, there is no experimental evidence of momentum-resolved Floquet band engineering of semiconductors, which is a crucial step to extend Floquet engineering to a wide range of solid-state materials. Here, on the basis of time and angle-resolved photoemission spectroscopy measurements, we report experimental signatures of Floquet band engineering in a model semiconductor, black phosphorus. On near-resonance pumping at a photon energy of 340-440 meV, a strong band renormalization is observed near the band edges. In particular, light-induced dynamical gap opening is resolved at the resonance points, which emerges simultaneously with the Floquet sidebands. Moreover, the band renormalization shows a strong selection rule favouring pump polarization along the armchair direction, suggesting pseudospin selectivity for the Floquetband engineering as enforced by the lattice symmetry. Our work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.