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碲(S、Se 和 Te)修饰的少层 TiCT MXene 杂化物:通过共价键调制性质。

Chalcogen (S, Se, and Te) decorated few-layered TiCT MXene hybrids: modulation of properties through covalent bonding.

机构信息

Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.

出版信息

Nanoscale. 2023 Feb 23;15(8):4033-4044. doi: 10.1039/d2nr05730a.

Abstract

2D carbides and nitrides of transition metals (MXenes) have shown great promise in a variety of energy storage and energy conversion applications. The extraordinary properties of MXenes are because of their excellent conductivity, large carrier concentration, vast specific surface area, superior hydrophilicity, high volumetric capacitance, and rich surface chemistry. However, it is still desired to synthesize MXenes with specific functional groups that deliver the required characteristics. This is due to the fact that a considerable amount of metal atoms is exposed on the surface of MXenes during their synthesis through an etching procedure; hence, other anions and cations are uncontrollably implanted on their surfaces. Because of this situation, the first invented TiCT MXene suffers from low photoresponsivity and detectivity, large overpotential, and small sensitivity in photoelectrochemical (PEC) photodetectors, hydrogen evolution reaction (HER), and sensing applications. Therefore, surface modification of the MXene structure is required to develop the device's performance. On the other hand, there is still a lack of understanding of the MXene mechanism in such cutting-edge applications. Thus, the manipulations of MXenes are highly dependent on understanding the device mechanism, suitable modification elements, and modification methods. This study for the first time reveals the conjugation effect of pre-selected S, Se, and Te chalcogen elements on a few-layered TiCT MXene to synthesize new composites for PEC photodetector, HER, and vapor sensor applications. Also, the mechanism of the chalcogen decorated few-layered TiCT MXene composites for each application is discussed. The selection of a few-layered TiCT MXene is due to its fascinating characteristics which make it capable to be considered as an appropriate substrate and incorporating chalcogen atoms. The Te-decorated few-layered TiCT MXene composite provides better performances in PEC photodetector and vapor sensing applications. Although the potential value of the Se-decorated few-layered TiCT composite is slightly lower than that of the Te-decorated sample in HER application, its overpotential is still greater than that of the Te-decorated sample. The acquired results show that the S-decorated few-layered TiCT composite demonstrates the lowest performance in all three examined applications in comparison with the other two samples.

摘要

2D 过渡金属碳化物和氮化物(MXenes)在各种储能和能量转换应用中显示出巨大的应用前景。MXenes 的卓越性能归因于其优异的导电性、大的载流子浓度、巨大的比表面积、优越的亲水性、高体积电容和丰富的表面化学性质。然而,仍然需要合成具有特定功能基团的 MXenes,以提供所需的特性。这是因为在通过蚀刻工艺合成 MXenes 时,大量的金属原子暴露在其表面上;因此,其他阴离子和阳离子不可控地植入其表面。由于这种情况,第一个发明的 TiCT MXene 在光电化学(PEC)光探测器、析氢反应(HER)和传感应用中表现出低光响应率和探测率、大过电势和小灵敏度。因此,需要对 MXene 结构进行表面改性以提高器件性能。另一方面,在这些前沿应用中,对 MXene 机制的理解仍然不足。因此,MXenes 的操作高度依赖于对器件机制、合适的改性元素和改性方法的理解。本研究首次揭示了预选的 S、Se 和 Te 类元素对少层 TiCT MXene 的共轭效应,以合成用于 PEC 光探测器、HER 和蒸汽传感器应用的新型复合材料。此外,还讨论了用于每种应用的硫族元素修饰少层 TiCT MXene 复合材料的机理。选择少层 TiCT MXene 是因为其迷人的特性使其能够被认为是一种合适的基底并掺入硫族原子。Te 修饰的少层 TiCT MXene 复合材料在 PEC 光探测器和蒸汽传感应用中提供了更好的性能。尽管在 HER 应用中,Se 修饰的少层 TiCT 复合材料的潜在价值略低于 Te 修饰的样品,但它的过电势仍然大于 Te 修饰的样品。所获得的结果表明,与其他两种样品相比,S 修饰的少层 TiCT 复合材料在所有三种测试应用中表现出最低的性能。

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