Lin Bo-Han, Chao Yung-Chun, Hsieh I Ta, Chuu Chih-Piao, Lee Chien-Ju, Chu Fu-Hsien, Lu Li-Syuan, Hsu Wei-Ting, Pao Chun-Wei, Shih Chih-Kang, Su Jung-Jung, Chang Wen-Hao
Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan.
Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan.
Nano Lett. 2023 Feb 22;23(4):1306-1312. doi: 10.1021/acs.nanolett.2c04524. Epub 2023 Feb 6.
A moiré superlattice formed in twisted van der Waals bilayers has emerged as a new tuning knob for creating new electronic states in two-dimensional materials. Excitonic properties can also be altered drastically due to the presence of moiré potential. However, quantifying the moiré potential for excitons is nontrivial. By creating a large ensemble of MoSe/MoS heterobilayers with a systematic variation of twist angles, we map out the minibands of interlayer and intralayer excitons as a function of twist angles, from which we determine the moiré potential for excitons. Surprisingly, the moiré potential depth for intralayer excitons is up to ∼130 meV, comparable to that for interlayer excitons. This result is markedly different from theoretical calculations based on density functional theory, which show an order of magnitude smaller moiré potential for intralayer excitons. The remarkably deep intralayer moiré potential is understood within the framework of structural reconstruction within the moiré unit cell.
扭曲范德华双层中形成的莫尔超晶格已成为在二维材料中创造新电子态的新型调节旋钮。由于莫尔势的存在,激子特性也会发生显著改变。然而,量化激子的莫尔势并非易事。通过创建大量具有系统变化扭转角的MoSe/MoS异质双层集合,我们绘制了层间和层内激子的微带作为扭转角的函数,从中确定了激子的莫尔势。令人惊讶的是,层内激子的莫尔势深度高达约130毫电子伏特,与层间激子相当。这一结果与基于密度泛函理论的理论计算明显不同,后者显示层内激子的莫尔势小一个数量级。在莫尔晶胞内结构重构的框架内可以理解层内莫尔势明显更深的情况。