Wang Jingli, Qiao Jingsi, Xu Kang, Chen Jiewei, Zhao Yuda, Qiu Bocheng, Lin Ziyuan, Ji Wei, Chai Yang
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518054, China.
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China; Beijing Key Laboratory of Optoelectronic Functional Materials & MicroNano Devices, Renmin University of China, Beijing 100872, China.
Sci Bull (Beijing). 2020 Sep 15;65(17):1451-1459. doi: 10.1016/j.scib.2020.05.008. Epub 2020 May 15.
The atomic structure of quasi one-dimensional (1D) van der Waals materials can be regarded as the stacking of atomic chains to form thin flakes or nanoribbons, which substantially differentiates them from typical two-dimensional (2D) layered materials and 1D nanotube/nanowire array. Here we present our studies on quasi 1D gold selenide (AuSe) that possesses highly anisotropic crystal structure, excellent electrical conductivity, giant magnetoresistance, and unusual reentrant metallic behavior. The low in-plane symmetry of AuSe gives rise to its high anisotropy of vibrational behavior. In contrast, quasi 1D AuSe exhibits high in-plane electrical conductivity along the directions of both atomic chains and perpendicular one, which can be understood as a result of strong interchain interaction. We found that AuSe exhibits a near quadratic nonsaturating giant magnetoresistance of 1841% with the magnetic field perpendicular to its in-plane. We also observe unusual reentrant metallic behavior, which is caused by the carrier mismatch in the multiband transport. Our works help to establish fundamental understandings on quasi 1D van der Waals semimetallic AuSe and identify it as a new candidate for exploring giant magnetoresistance and compensated semimetals.
准一维(1D)范德华材料的原子结构可视为原子链堆叠形成薄片或纳米带,这使其与典型的二维(2D)层状材料和一维纳米管/纳米线阵列有很大区别。在此,我们展示了对准一维硒化金(AuSe)的研究,它具有高度各向异性的晶体结构、优异的导电性、巨磁电阻和不寻常的再入金属行为。AuSe的低面内对称性导致其振动行为具有高各向异性。相比之下,准一维AuSe沿原子链方向及其垂直方向均表现出高面内电导率,这可归因于强链间相互作用。我们发现,当磁场垂直于其面内方向时,AuSe表现出近二次方的非饱和巨磁电阻,高达1841%。我们还观察到不寻常的再入金属行为,这是由多带输运中的载流子失配引起的。我们的工作有助于建立对准一维范德华半金属AuSe的基本认识,并将其确定为探索巨磁电阻和补偿半金属的新候选材料。