Hu Guojing, Zhu Yuanmin, Xiang Junxiang, Yang Tzu-Yi, Huang Meng, Wang Zhe, Wang Zhi, Liu Ping, Zhang Ying, Feng Chao, Hou Dazhi, Zhu Wenguang, Gu Meng, Hsu Chia-Hsiu, Chuang Feng-Chuan, Lu Yalin, Xiang Bin, Chueh Yu-Lun
Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui 230026, China.
ACS Nano. 2020 Sep 22;14(9):12037-12044. doi: 10.1021/acsnano.0c05252. Epub 2020 Sep 9.
The presence of two-dimensional (2D) layer-stacking heterostructures that can efficiently tune the interface properties by stacking desirable materials provides a platform to investigate some physical phenomena, such as the proximity effect and magnetic exchange coupling. Here, we report the observation of antisymmetric magnetoresistance in a van der Waals (vdW) antiferromagnetic/ferromagnetic (AFM/FM) heterostructure of MnPS/FeGeTe when the temperature is below the Neel temperature of MnPS. Distinguished from two resistance states in conventional giant magnetoresistance, the magnetoresistance in the MnPS/FeGeTe heterostructure exhibits three states, of high, intermediate, and low resistance. This antisymmetric magnetoresistance spike is determined by an unsynchronized magnetic switching between the AFM/FM interface layer and the bulk of FeGeTe during magnetization reversal. Our work highlights that the artificial vdW stacking structure holds potential to explore some physical phenomena and spintronic device applications.
二维（2D）层状堆叠异质结构的存在，能够通过堆叠所需材料有效地调节界面性质，为研究诸如近邻效应和磁交换耦合等一些物理现象提供了一个平台。在此，我们报道了在温度低于MnPS的尼尔温度时，观察到在MnPS/FeGeTe的范德华（vdW）反铁磁/铁磁（AFM/FM）异质结构中存在反对称磁阻。与传统巨磁阻中的两种电阻状态不同，MnPS/FeGeTe异质结构中的磁阻呈现出高、中、低三种电阻状态。这种反对称磁阻尖峰是由磁化反转过程中AFM/FM界面层与FeGeTe体之间的非同步磁开关决定的。我们的工作突出表明，人工vdW堆叠结构在探索一些物理现象和自旋电子器件应用方面具有潜力。
