Liu Jihong, Zhang Zicai, Qiao Shuang, Fu Guangsheng, Wang Shufang, Pan Caofeng
Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China.
Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China; Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
Sci Bull (Beijing). 2020 Mar 30;65(6):477-485. doi: 10.1016/j.scib.2019.11.016. Epub 2019 Nov 18.
Cu(In,Ga)Se (CIGS) based multilayer heterojunction, as one of the best high efficiency thin film solar cells, has attracted great interest due to its outstanding features. However, the present studies are primarily focused on the structure optimization and modulation in order to enhance the photoelectric conversion efficiency. Here, we exploit another application of this multilayer heterostructure in photoresistance-modulated position sensitive detector by introducing lateral photoresistance effect. The lateral photoresistance measurements show that this multilayer heterojunction exhibits a wide spectral response (~330 to ~1150 nm) and excellent bipolar photoresistance performances (position sensitivity of ~63.26 Ω/mm and nonlinearity <4.5%), and a fast response speed (rise and fall time of ~14.46 and ~14.42 ms, respectively). More importantly, based on the lateral photoresistance effect, the CIGS heterostructure may also be developed as a position-dependent resistance memory device, which can be modulated by changing laser intensity, wavelength, and bias voltage with excellent stability and repeatability, and the position resolution reaches up to 1 μm. These results can be well explained by considering the diffusion and the drift model of carriers in the CIGS multilayer heterojunction. This work provides a new approach of achieving novel photoelectric sensors and memory devices based on the traditional photovoltaic heterostructures.
基于铜铟镓硒（CIGS）的多层异质结作为最佳的高效薄膜太阳能电池之一，因其卓越特性而备受关注。然而，目前的研究主要集中在结构优化和调制上，以提高光电转换效率。在此，我们通过引入横向光电阻效应，开发了这种多层异质结构在光电阻调制位置敏感探测器中的另一种应用。横向光电阻测量表明，这种多层异质结展现出宽光谱响应（约330至约1150纳米）、优异的双极光电阻性能（位置灵敏度约为63.26Ω/mm，非线性<4.5%）以及快速响应速度（上升和下降时间分别约为14.46和14.42毫秒）。更重要的是，基于横向光电阻效应，CIGS异质结构还可被开发为一种位置依赖电阻存储器件，它可通过改变激光强度、波长和偏置电压进行调制，具有出色的稳定性和重复性，位置分辨率高达1μm。考虑到CIGS多层异质结中载流子的扩散和漂移模型，这些结果能够得到很好的解释。这项工作为基于传统光伏异质结构实现新型光电传感器和存储器件提供了一种新方法。
