Thermal degradation of the bulk and interfacial traps at 85 °C in perovskite photovoltaics.

The facile formation of defects in halide perovskite has recently been regarded as the main bottleneck for both the efficiency and stability of perovskite solar cells (PSCs). Therefore, understanding and controlling defects and traps in PSCs is essential to achieving stable devices. Herein, the thermal degradation of perovskite solar cells at 85 °C is studied in terms of electronic traps and device performance, of which the correlations are discussed. In particular, the shifts and changes in both energetic and spatial distributions of electronic defects are observed by capacitance plus impedance analyses under thermal stress. As the energy level and density of deep traps are quantitatively investigated, both the relaxation and degradation of the traps are identified at different timescales. Additionally, the trap densities are individually traced by positions during thermal degradation, where distinct evolutions are visualized. Notably, the traps are measured dominant at the interface between the perovskite and electron-transport layer (ETL). However, LiF incorporation mitigates the electronic traps by an order of magnitude at both interfaces throughout the thermal degradation, indicating that LiF incorporation reduces the initial trap density and suppresses the further formation of traps near the interfaces.