Mondal Amit Kumar, Pan Xin, Kwon Ohyun, Vardeny Zeev Valy
Department of Physics & Astronomy, University of Utah, Salt Lake City, Utah 84112, United States.
Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., 130, Samsung-Ro, Yeongtong-gu, Suwon-Si 16678, Gyeonggi-do, Republic of Korea.
ACS Appl Mater Interfaces. 2023 Feb 22;15(7):9697-9704. doi: 10.1021/acsami.2c20070. Epub 2023 Feb 7.
Understanding the stability and degradation of organic light-emitting diodes (OLEDs) under working conditions is a significant area of research for developing more effective OLEDs and further improving their performance. However, studies of degradation processes by in situ noninvasive methods have not been adequately developed. In this work, tris-(8-hydroxyquinolino) aluminum (Alq)-based OLED degradation processes have been analyzed through the investigation of the device dispersive magneto-electroluminescence (MEL()) response measured at room temperature. By studying the change in the MEL() response during the device degradation under different external stimuli, such as exposing the device to the atmosphere and prolonged illumination by a strong visible light source, we have gained insight into the microscopic spin-dependent phenomena that control the recombination of e-h polaron pairs in the device. We found that the device degradation leads to a shorter e-h polaron lifetime, smaller dispersive parameter, and broader lifetime distribution function that shows increased disorder in the active layer. This study could offer a potential tool that may be beneficial for assessing the degradation of OLED devices based on various active layers.
了解有机发光二极管(OLED)在工作条件下的稳定性和降解情况,是开发更高效OLED并进一步提升其性能的重要研究领域。然而,通过原位非侵入性方法对降解过程的研究尚未得到充分发展。在这项工作中,通过研究室温下测量的器件色散磁电致发光(MEL())响应,分析了基于三(8-羟基喹啉)铝(Alq)的OLED降解过程。通过研究在不同外部刺激(如将器件暴露于大气中以及用强可见光源长时间照射)下器件降解过程中MEL()响应的变化,我们深入了解了控制器件中电子-空穴极化子对复合的微观自旋相关现象。我们发现,器件降解会导致电子-空穴极化子寿命缩短、色散参数变小以及寿命分布函数变宽,这表明有源层中的无序度增加。这项研究可能提供一种潜在工具,有助于评估基于各种有源层的OLED器件的降解情况。