Monolithic Multicolor Emissions of InGaN-Based Hybrid Light-Emitting Diodes Using CsPbBr Green Quantum Dots.

To address the increasing demand for multicolor light-emitting diodes (LEDs), a monolithic multicolor LED with a simple process and high reliability is desirable. In this study, organic-inorganic hybrid LEDs with violet and green wavelengths were fabricated by depositing CsPbBr perovskite green quantum dots (QDs) as the light-converting material on InGaN-based violet LEDs. As the injection current was increased, the total electroluminescence (EL) intensities of the hybrid LEDs increased, whereas the light-converted green emission efficiency of the CsPbBr QDs decreased. The maximum green-to-violet EL spectral intensity ratio of the hybrid LEDs with CsPbBr QDs was achieved with the injection current of <10 mA. Moreover, the EL spectral ratio of the green-to-violet emission decreased at an injection current of 100 mA. The light-conversion intensity of the CsPbBr QDs decreased linearly as the junction temperature of the hybrid LEDs was increased with increasing injection current, similar to the temperature-dependent photoluminescence degradation of CsPbBr QDs. In addition, the junction temperature of the hybrid LED was minimized by pulse injection to suppress the thermal degradation of QDs and increase the light conversion efficiency to green emission. Therefore, the overall emission spectrum color coordinates of the hybrid LEDs exhibited a red shift from violet to blue in the low-current region and a blue shift toward violet as the green emission of the QDs was decreased above 10 mA.