Zhang Shaodong, Li Shuangru, Wei Lei, Zhang Huadi, Wang Xuping, Liu Bing, Zhang Yuanyuan, Zhang Rui, Qiu Chengcheng
Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China.
Shandong Academy of Sciences Yida Technology Consulting Co., Ltd., Jinan 250014, China.
Nanomaterials (Basel). 2023 Jan 17;13(3):376. doi: 10.3390/nano13030376.
Ferroelectric domain walls (DWs) of perovskite oxide materials, which can be written and erased by an external electric field, offer the possibility to dynamically manipulate phonon scattering and thermal flux behavior. Different from previous ferroelectric materials, such as BaTiO, PbTiO, etc., with an immutable and low Curie temperature. The Curie temperature of perovskite oxide KTaNbO (KTN) crystal can be tuned by altering the Ta/Nb ratio. In this work, the ferroelectric KTaNbO (KTN) single crystal is obtained by the Czochralski method. To understand the role of ferroelectric domains in thermal transport behavior, we perform a nonequilibrium molecular dynamics (NEMD) calculation on monodomain and 90° DWs of KTN at room temperature. The calculated thermal conductivity of monodomain KTN is 9.84 W/(m·k), consistent with experimental results of 8.96 W/(m·k), and distinctly decreased with the number of DWs indicating the outstanding performance of the thermal switch. We further evaluate the thermal boundary resistance (TBR) of KTN DWs. An interfacial thermal resistance value of 2.29 × 10 K·m/W and a large thermal switch ratio of 4.76 was obtained for a single DW of KTN. Our study shows that the ferroelectric KTN can provide great potential for the application of thermal switch at room temperature and over a broad temperature range.
钙钛矿氧化物材料的铁电畴壁(DWs)可通过外部电场进行写入和擦除,为动态操纵声子散射和热流行为提供了可能性。与先前的铁电材料不同,如BaTiO、PbTiO等,其居里温度固定且较低。钙钛矿氧化物KTaNbO(KTN)晶体的居里温度可通过改变Ta/Nb比来调节。在这项工作中,通过提拉法获得了铁电KTaNbO(KTN)单晶。为了理解铁电畴在热输运行为中的作用,我们在室温下对KTN的单畴和90°畴壁进行了非平衡分子动力学(NEMD)计算。计算得到的单畴KTN的热导率为9.84W/(m·k),与8.96W/(m·k)的实验结果一致,并且随着畴壁数量的增加而明显降低,这表明了热开关的优异性能。我们进一步评估了KTN畴壁的热边界电阻(TBR)。对于KTN的单个畴壁,获得了2.29×10K·m/W的界面热阻值和4.76的大热开关比。我们的研究表明,铁电KTN在室温及较宽温度范围内的热开关应用中具有巨大潜力。