Umedov Shodruz T, Grigorieva Anastasia V, Sobolev Alexey V, Knotko Alexander V, Lepnev Leonid S, Kolesnikov Efim A, Charkin Dmitri O, Shevelkov Andrei V
Department of Materials Science, Lomonosov Moscow State University, Leninskie Gory 1/73, 119991 Moscow, Russia.
Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119991 Moscow, Russia.
Nanomaterials (Basel). 2023 Jan 20;13(3):427. doi: 10.3390/nano13030427.
Metal gallium as a low-melting solid was applied in a mixture with elemental iodine to substitute tin(IV) in a promising light-harvesting phase of CsSnI by a reactive sintering method. The reducing power of gallium was applied to influence the optoelectronic properties of the CsSnI phase via partial reduction of tin(IV) and, very likely, substitute partially Sn by Ga. The reduction of Sn to Sn in the CsSnI phase contributes to the switching from -type conductivity to n-type, thereby improving the total concentration and mobility of negative-charge carriers. The phase composition of the samples obtained was studied by X-ray diffraction (XRD) and Sn Mössbauer spectroscopy (MS). It is shown that the excess of metal gallium in a reaction melt leads to the two-phase product containing CsSnI with Sn and β-CsSnI with Sn. UV-visible absorption spectroscopy shows a high absorption coefficient of the composite material.
金属镓作为一种低熔点固体，与元素碘混合应用，通过反应烧结法在有前景的CsSnI光捕获相中替代锡（IV）。利用镓的还原能力，通过部分还原锡（IV）来影响CsSnI相的光电性能，并且很可能用Ga部分替代Sn。CsSnI相中Sn还原为Sn有助于从p型导电转变为n型导电，从而提高负电荷载流子的总浓度和迁移率。通过X射线衍射（XRD）和Sn穆斯堡尔谱（MS）研究了所得样品的相组成。结果表明，反应熔体中过量的金属镓导致形成含有Sn的CsSnI和含有Sn的β-CsSnI的两相产物。紫外-可见吸收光谱显示该复合材料具有高吸收系数。
