Wijesekara Anjana, Varagnolo Silvia, Dabera G Dinesha M R, Marshall Kenneth P, Pereira H Jessica, Hatton Ross A
Department of Chemistry, University of Warwick, CV4 7AL, Coventry, United Kingdom.
Sci Rep. 2018 Oct 24;8(1):15722. doi: 10.1038/s41598-018-33987-7.
We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI perovskite. Remarkably, when B-γ-CsSnI perovskite is deposited from a dimethylformamide solution onto a 180-190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI perovskite photovoltaics processed from solution.
我们报告了一项关于硫氰酸亚铜（CuSCN）作为基于CsSnI钙钛矿黑色γ相（B-γ）的倒置光伏（PV）器件中空穴传输层适用性的研究结果。值得注意的是，当从二甲基甲酰胺溶液中将B-γ-CsSnI钙钛矿沉积到支撑在氧化铟锡（ITO）电极上的180 - 190nm厚的CuSCN薄膜上时，CuSCN层被完全取代，留下了一个对底层ITO电极具有高均匀性和覆盖率的钙钛矿层。钙钛矿沉积后剩余薄膜的厚度和成分的详细分析以及光伏器件研究证实了这一发现。这项研究的结果表明，虽然CuSCN已被证明是高性能铅钙钛矿和有机光伏的优异空穴提取层，但它不适用于从溶液中加工的倒置B-γ-CsSnI钙钛矿光伏中的空穴传输层。
