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基于薄膜体声波谐振器的柔性重力传感器的设计与制作。

Design and Fabrication of a Flexible Gravimetric Sensor Based on a Thin-Film Bulk Acoustic Wave Resonator.

机构信息

Department of Electrical and Information Engineering, Politecnico di Bari, 70125 Bari, Italy.

Center for Biomolecular Nanotechnologies, Istituto Italiano di Tecnologia, 73010 Arnesano, Italy.

出版信息

Sensors (Basel). 2023 Feb 2;23(3):1655. doi: 10.3390/s23031655.

DOI:10.3390/s23031655
PMID:36772702
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9919303/
Abstract

Sensing systems are becoming less and less invasive. In this context, flexible materials offer new opportunities that are impossible to achieve with bulky and rigid chips. Standard silicon sensors cannot be adapted to curved shapes and are susceptible to big deformations, thus discouraging their use in wearable applications. Another step forward toward minimising the impacts of the sensors can be to avoid the use of cables and connectors by exploiting wireless transmissions at ultra-high frequencies (UHFs). Thin-film bulk acoustic wave resonators (FBARs) represent the most promising choice among all of the piezoelectric microelectromechanical system (MEMS) resonators for the climbing of radio frequencies. Accordingly, the fabrication of FBARs on flexible and wearable substrates represents a strategic step toward obtaining a new generation of highly sensitive wireless sensors. In this work, we propose the design and fabrication of a flexible gravimetric sensor based on an FBAR on a polymeric substrate. The resonator presents one of the highest electromechanical coupling factors in the category of flexible AlN-based FBARs, equal to 6%. Moreover, thanks to the polymeric support layer, the presence of membranes can be avoided, which leads to a faster and cheaper fabrication process and higher robustness of the structure. The mass sensitivity of the device was evaluated, obtaining a promising value of 23.31 ppm/pg. We strongly believe that these results can pave the way to a new class of wearable MEMS sensors that exploit ultra-high-frequency (UHF) transmissions.

摘要

传感系统的侵入性正变得越来越小。在这种背景下,柔性材料提供了新的机会,而这是使用笨重和刚性芯片无法实现的。标准的硅传感器无法适应弯曲的形状,并且容易发生大变形,因此不鼓励将其用于可穿戴应用中。朝着最小化传感器影响的另一个步骤可以是通过利用超高频 (UHF) 进行无线传输来避免使用电缆和连接器。薄膜体声波谐振器 (FBAR) 在所有压电微机电系统 (MEMS) 谐振器中是用于提高射频的最有前途的选择。因此,在柔性和可穿戴基板上制造 FBAR 是获得新一代高灵敏度无线传感器的关键步骤。在这项工作中,我们提出了一种基于聚合物基板上 FBAR 的柔性称重传感器的设计和制造。该谐振器在基于柔性 AlN 的 FBAR 类别中具有最高的机电耦合系数之一,等于 6%。此外,由于聚合物支撑层的存在,可以避免使用膜,这导致制造过程更快、更便宜,并且结构更坚固。该器件的质量灵敏度进行了评估,得到了有前途的 23.31 ppm/pg 值。我们坚信,这些结果可以为利用超高频 (UHF) 传输的新型可穿戴 MEMS 传感器铺平道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/056c243f2141/sensors-23-01655-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/3d8dff6293c4/sensors-23-01655-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/408d4208d045/sensors-23-01655-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/fc8da7d06f37/sensors-23-01655-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/9a79ad537db0/sensors-23-01655-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/056c243f2141/sensors-23-01655-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/3d8dff6293c4/sensors-23-01655-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/408d4208d045/sensors-23-01655-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/fc8da7d06f37/sensors-23-01655-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/9a79ad537db0/sensors-23-01655-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5fea/9919303/056c243f2141/sensors-23-01655-g005.jpg

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