State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, P. R. China.
Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu Hydrogen Valley, Foshan, 528200, P. R. China.
Adv Mater. 2023 Apr;35(17):e2211207. doi: 10.1002/adma.202211207. Epub 2023 Mar 17.
Transmission electron microscopy (TEM) is a powerful tool for unveiling the structural, compositional, and electronic properties of organic-inorganic hybrid perovskites (OIHPs) at the atomic to micrometer length scales. However, the structural and compositional instability of OIHPs under electron beam radiation results in misunderstandings of the microscopic structure-property-performance relationship in OIHP devices. Here, ultralow dose TEM is utilized to identify the mechanism of the electron-beam-induced changes in OHIPs and clarify the cumulative electron dose thresholds (critical dose) of different commercially interesting state-of-the-art OIHPs, including methylammonium lead iodide (MAPbI ), formamidinium lead iodide (FAPbI ), FA Cs PbI , FA Cs PbI , and MAPb Sn I . The critical dose is related to the composition of the OIHPs, with FA Cs PbI having the highest critical dose of ≈84 e Å and FA Cs PbI having the lowest critical dose of ≈4.2 e Å . The electron beam irradiation results in the formation of a superstructure with ordered I and FA vacancies along <110> , as identified from the three major crystal axes in cubic FAPbI , <100> , <110> , and <111> . The intragrain planar defects in FAPbI are stable, while an obvious modification is observed in FA Cs PbI under continuous electron beam exposure. This information can serve as a guide for ensuring a reliable understanding of the microstructure of OIHP optoelectronic devices by TEM.
透射电子显微镜(TEM)是揭示有机-无机杂化钙钛矿(OIHPs)在原子到微米长度尺度上的结构、组成和电子性质的强大工具。然而,OIHPs 在电子束辐射下的结构和组成不稳定性导致了对 OIHP 器件中微观结构-性能关系的误解。在这里,采用超低剂量 TEM 来确定 OIHPs 中电子束诱导变化的机制,并澄清不同具有商业应用前景的 OIHPs 的累积电子剂量阈值(临界剂量),包括甲脒碘化铅(MAPbI )、甲脒碘化铯(FAPbI )、铯铅碘(FA Cs PbI )、铯铅碘(FA Cs PbI )和锡碘化铅(MAPb Sn I )。临界剂量与 OIHPs 的组成有关,FA Cs PbI 的临界剂量最高,约为 84 e Å,FA Cs PbI 的临界剂量最低,约为 4.2 e Å。电子束辐照导致沿<110>方向形成具有有序 I 和 FA 空位的超结构,这是从立方 FAPbI 的三个主要晶轴<100>、<110>和<111>中确定的。FAPbI 中的晶内面缺陷是稳定的,而在连续电子束照射下,FA Cs PbI 中观察到明显的修饰。这些信息可以作为通过 TEM 确保可靠理解 OIHP 光电设备微观结构的指南。