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修正：利用薄钛层的直接清除效应实现Mo/HfZrO/Si电容器的界面工程

Correction: Interfacial engineering of a Mo/HfZrO/Si capacitor using the direct scavenging effect of a thin Ti layer.

作者信息

Kim Se Hyun, Yu Geun Taek, Park Geun Hyeong, Lee Dong Hyun, Park Ju Yong, Yang Kun, Lee Eun Been, Lee Je In, Park Min Hyuk

机构信息

School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea.

Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.

出版信息

Chem Commun (Camb). 2023 Feb 28;59(18):2668. doi: 10.1039/d3cc90042h.

DOI:10.1039/d3cc90042h
PMID:36799462
Abstract

Correction for 'Interfacial engineering of a Mo/HfZrO/Si capacitor using the direct scavenging effect of a thin Ti layer' by Se Hyun Kim , , 2021, , 12452-12455, https://doi.org/10.1039/D1CC04966F.

摘要

对金相铉等人于2021年发表的《利用薄钛层的直接清除效应实现Mo/HfZrO/Si电容器的界面工程》一文的更正，文章编号12452 - 12455，https://doi.org/10.1039/D1CC04966F 。

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