Kim Se Hyun, Yu Geun Taek, Park Geun Hyeong, Lee Dong Hyun, Park Ju Yong, Yang Kun, Lee Eun Been, Lee Je In, Park Min Hyuk
School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea.
Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, Republic of Korea.
Chem Commun (Camb). 2021 Nov 23;57(93):12452-12455. doi: 10.1039/d1cc04966f.
An antiferroelectric Mo/HfZrO/SIO/Si capacitor was engineered using the direct scavenging effect of a sputtered Ti sacrificial layer. Charge trapping could be mitigated with the oxidized TiO layer, and the endurance could be enhanced beyond 10 cycles, which is higher than that of the gate stack of ferroelectric field-effect-transistors by 3-4 orders of magnitude.
利用溅射钛牺牲层的直接清除效应设计了一种反铁电钼/铪锆氧化物/二氧化硅/硅电容器。氧化钛层可以减轻电荷俘获，并且耐久性可以提高到超过10次循环，这比铁电场效应晶体管的栅堆叠高出3 - 4个数量级。
