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具有非晶绝缘体薄膜的隧道结忆阻器的性能改进

Performance improvement of a tunnel junction memristor with amorphous insulator film.

作者信息

Liu Fenning, Peng Yue, Liu Yan, Xiao Wenwu, Hao Yue, Han Genquan

机构信息

State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, People's Republic of China.

Xi'an UniIC Semiconductors, Xi'an, 710075, China.

出版信息

Discov Nano. 2023 Feb 21;18(1):20. doi: 10.1186/s11671-023-03800-0.

DOI:10.1186/s11671-023-03800-0
PMID:36809397
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9944204/
Abstract

This study theoretically demonstrated the oxygen vacancy (V)-based modulation of a tunneling junction memristor (TJM) with a high and tunable tunneling electroresistance (TER) ratio. The tunneling barrier height and width are modulated by the V-related dipoles, and the ON and OFF-state of the device are achieved by the accumulation of V and negative charges near the semiconductor electrode, respectively. Furthemore, the TER ratio of TJMs can be tuned by varying the density of the ion dipoles (N), thicknesses of ferroelectric-like film (T) and SiO (T), doping concentration (N) of the semiconductor electrode, and the workfunction of the top electrode (TE). An optimized TER ratio can be achieved with high oxygen vacancy density, relatively thick T, thin T, small N, and moderate TE workfunction.

摘要

本研究从理论上证明了基于氧空位（V）对具有高且可调隧穿电阻（TER）比的隧穿结忆阻器（TJM）的调制。隧穿势垒高度和宽度由与V相关的偶极子调制，并且器件的导通和关断状态分别通过V和负电荷在半导体电极附近的积累来实现。此外，TJM的TER比可通过改变离子偶极子密度（N）、类铁电薄膜厚度（T）和SiO厚度（T）、半导体电极的掺杂浓度（N）以及顶电极（TE）的功函数来调节。通过高氧空位密度、相对较厚的T、较薄的T、较小的N和适中的TE功函数可实现优化的TER比。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/99e0baa0dc0b/11671_2023_3800_Fig13_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/99e0baa0dc0b/11671_2023_3800_Fig13_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/faf26c562539/11671_2023_3800_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/26f7e332cd24/11671_2023_3800_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/4889b0d94b03/11671_2023_3800_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/039c612a64c6/11671_2023_3800_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/423d9f574e33/11671_2023_3800_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/e1b469deef7f/11671_2023_3800_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/e1ca8491b882/11671_2023_3800_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/8e6adf8ad4d2/11671_2023_3800_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/757af3b24f7c/11671_2023_3800_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/b1532398a85a/11671_2023_3800_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/f9a754f1ce12/11671_2023_3800_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/52de8622b259/11671_2023_3800_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a6f/9944204/99e0baa0dc0b/11671_2023_3800_Fig13_HTML.jpg

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本文引用的文献

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Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO Film.具有超薄非晶HfO薄膜的类铁电场效应晶体管中的突触行为
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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory.非易失性存储器用非晶薄膜中源自氧空位偶极子的类铁电行为
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ZrO Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles.
由可切换氧空位偶极子实现的氧化锆铁电场效应晶体管。
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Memristor with a ferroelectric HfO layer: in which case it is a ferroelectric tunnel junction.具有铁电HfO层的忆阻器：在这种情况下它是一个铁电隧道结。
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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier.通过工程化肖特基势垒实现金属/铁电体/半导体隧道结中的巨型隧道电阻效应。
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