Opt Express. 2023 Feb 13;31(4):6484-6498. doi: 10.1364/OE.475987.
In this paper, we report on waveguide-type modified uni-traveling-carrier photodiodes (MUTC-PDs) providing a record high output power level for non-resonant photodiodes in the WR3.4 band. Indium phosphide (InP) based waveguide-type 1.55 µm MUTC-PDs have been fabricated and characterized thoroughly. Maximum output powers of -0.6 dBm and -2.7 dBm were achieved at 240 GHz and 280 GHz, respectively. This has been accomplished by an optimized layer structure and doping profile design that takes transient carrier dynamics into account. An energy-balance model has been developed to study and optimize carrier transport at high optical input intensities. The advantageous THz capabilities of the optimized MUTC layer structure are confirmed by experiments revealing a transit time limited cutoff frequency of 249 GHz and a saturation photocurrent beyond 20 mA in the WR3.4 band. The responsivity for a 16 µm long waveguide-type THz MUTC-PD is found to be 0.25 A/W. In addition, bow-tie antenna integrated waveguide-type MUTC-PDs are fabricated and reported to operate up to 0.7 THz above a received power of -40 dBm.
在本文中，我们报告了一种波导型改进单载流子光电探测器（MUTC-PD），它在 WR3.4 波段为非共振光电二极管提供了创纪录的高输出功率水平。我们已经制造和彻底表征了基于磷化铟（InP）的 1.55 µm 波导型 MUTC-PD。在 240 GHz 和 280 GHz 时，分别实现了-0.6 dBm 和-2.7 dBm 的最大输出功率。这是通过优化的层结构和掺杂轮廓设计实现的，该设计考虑了瞬态载流子动力学。我们开发了一个能量平衡模型来研究和优化高光功率输入下的载流子输运。实验证实了优化的 MUTC 层结构的有利太赫兹性能，在 WR3.4 波段的渡越时间限制截止频率为 249 GHz，饱和光电流超过 20 mA。对于 16 µm 长的波导型太赫兹 MUTC-PD，发现其响应率为 0.25 A/W。此外，我们还制造了集成蝶形天线的波导型 MUTC-PD，并报告了在接收功率为-40 dBm 以上时，可工作在 0.7 THz 以上的频率。
