Dong Xiaowen, Liu Kai
State Key Laboratory of Information Photonics and Optical Communications, School of Electrical and Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Sensors (Basel). 2024 Mar 22;24(7):2020. doi: 10.3390/s24072020.
We have designed the MUTC-PD with an optimized thickness of cliff layer to pre-distort the electric field at the front side of the collection layer. With the optimized MUTC-PD design, the collapse of the electric field will be greatly suppressed, and the electrons in its collection layer will gradually reach their peak velocity with the growing incident light power. Moreover, as the incident light intensity increases, the differential capacitance also declines, thus the total bandwidth grows. It will make the MUTC-PD achieve high-speed and high-power response performance simultaneously. Based on simulation, for 16μm MUTC-PD with a 70 nm cliff layer, the maximum 3 dB bandwidth at -5 V is 137 GHz, compared with 64 GHz for the MUTC-PD with a 30 nm cliff layer. The saturation RF output power is 27.4 dBm at 60 GHz.
我们设计的MUTC-PD具有优化的悬崖层厚度，以对收集层正面的电场进行预失真。通过优化的MUTC-PD设计，电场的崩溃将得到极大抑制，并且其收集层中的电子将随着入射光功率的增加而逐渐达到其峰值速度。此外，随着入射光强度的增加，差分电容也会下降，从而总带宽增加。这将使MUTC-PD同时实现高速和高功率响应性能。基于模拟，对于具有70nm悬崖层的16μm MUTC-PD，在-5V时的最大3dB带宽为137GHz，而具有30nm悬崖层的MUTC-PD为64GHz。在60GHz时，饱和射频输出功率为27.4dBm。
