2 MeV proton irradiation effect on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors.

In this work, we investigated the effect of 2 MeV proton irradiation on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors by combining ground-based irradiation experiments with Stopping and Range of Ions in Matter (SRIM) computer simulations. We found that irradiation with 2 MeV protons significantly increases the dark current density of the detector by more than two orders of magnitude. At the same time, the quantum efficiency decreases by an order of magnitude. Moreover, proton irradiation degrades the device's performance by raising bulk and surface leakage currents. As the mesa size of the device increases, the proportion of surface leakage current in the total dark current drops. When the mesa size is smaller, the detector irradiation damage is greater. In addition, simulations indicate that the amount of damage produced by 2 MeV proton irradiation rises as irradiation fluences increase. The trends of the irradiation damage produced by the SRIM simulation results and the photocurrent measurements after proton irradiation are consistent, whereas the dark current measurements are identical only at small fluences.