Opt Express. 2023 Feb 13;31(4):6566-6576. doi: 10.1364/OE.481794.
In this work, we investigated the effect of 2 MeV proton irradiation on the performance of InAs/GaSb type-II superlattice long-wave infrared detectors by combining ground-based irradiation experiments with Stopping and Range of Ions in Matter (SRIM) computer simulations. We found that irradiation with 2 MeV protons significantly increases the dark current density of the detector by more than two orders of magnitude. At the same time, the quantum efficiency decreases by an order of magnitude. Moreover, proton irradiation degrades the device's performance by raising bulk and surface leakage currents. As the mesa size of the device increases, the proportion of surface leakage current in the total dark current drops. When the mesa size is smaller, the detector irradiation damage is greater. In addition, simulations indicate that the amount of damage produced by 2 MeV proton irradiation rises as irradiation fluences increase. The trends of the irradiation damage produced by the SRIM simulation results and the photocurrent measurements after proton irradiation are consistent, whereas the dark current measurements are identical only at small fluences.
在这项工作中，我们通过结合地面辐照实验和 Stopping and Range of Ions in Matter (SRIM) 计算机模拟，研究了 2 MeV 质子辐照对 InAs/GaSb 型 II 超晶格长波红外探测器性能的影响。我们发现，2 MeV 质子辐照会使探测器的暗电流密度增加两个数量级以上。同时，量子效率下降了一个数量级。此外，质子辐照会通过增加体漏电流和表面漏电流来降低器件的性能。随着器件台面尺寸的增大，表面漏电流在总暗电流中的比例下降。当台面尺寸较小时，探测器的辐照损伤较大。此外，模拟表明，随着辐照剂量的增加，2 MeV 质子辐照产生的损伤量增加。SRIM 模拟结果和质子辐照后光电流测量产生的辐照损伤趋势一致，而暗电流测量只有在小剂量时才一致。
