Photoelectric property degradation of graded barrier InAs/GaSb type II superlattice long-wave infrared detectors under 1 MeV electron irradiation.

Amid rapid advancements in aerospace science and technology, studying the effects of space radiation on an infrared detector is crucial for enhancing their reliability in radiation environments, particularly against electrons-one of the most damaging charged particles. Barrier structures significantly reduce dark current without any substantial degradation in the optical performance of the devices. Consequently, they are being investigated for use in extreme environments. This paper presents a study on the performance degradation of InAs/GaSb type II superlattice (T2SLs) long-wave infrared (LWIR) detectors with a graded barrier structure under 1 MeV electron irradiation and analyzes potential damage mechanisms. The findings indicate that 1 MeV electron irradiation causes both ionization and displacement damage to the graded barrier InAs/GaSb T2SL LWIR detectors. After irradiation with a fluence of 2 × 10 e/cm, the device's dark current density has increased by approximately two orders of magnitude, while the quantum efficiency has decreased by approximately one order of magnitude. As the device mesa shrinks, the sensitivity of dark current to radiation exposure increases. Electron irradiation notably exacerbates surface leakage and bulk dark current, with a pronounced increase in surface leakage current. The study also reveals that electron irradiation primarily enhances the dark current by introducing defect states, thereby leading to device performance degradation.