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采用发泡法制备碳化硅多孔陶瓷

Fabrication of SiC Porous Ceramics by Foaming Method.

作者信息

Zhao Jing, Ban Xiaoqi, Yang Yifan, Yuan Zhigang, Ru Hongqiang, Su Desheng

机构信息

School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159, China.

Liaoning Ultra High Power Graphite Electrode Material Professional Technology Innovation Center, Dandong 118100, China.

出版信息

Materials (Basel). 2023 Feb 4;16(4):1342. doi: 10.3390/ma16041342.

DOI:10.3390/ma16041342
PMID:36836972
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9962626/
Abstract

In this work, hierarchically porous SiC ceramics were prepared via the foaming method. Porous ceramics with tunable, uniform, and bimodal pore structures were successfully fabricated in a facile way. The formation mechanisms of the 1st and 2nd modal macropores are the HO foaming process and SiC particle overlap, respectively. The effect of pore-foaming agent amount, foaming temperature, and surfactant was investigated. According to the results, with increasing HO amount, the porosity, pore size, and interconnectivity of the 1st modal pores increased, whereas bulk density and strength decreased. The porosity increased while the strength decreased as the foaming temperature increased. Surfactants increased pore interconnectivity and porosity. When the foaming temperature was 85 °C, and the addition of HO was 5 wt.%, the porosity, bulk density, flexural strength, and compressive strength were 56.32%, 2.8301 g/cm, 11.94 MPa, and 24.32 MPa, respectively. Moreover, SiC porous ceramics exhibited excellent corrosion resistance to acids and alkalis.

摘要

在这项工作中,通过发泡法制备了具有分级多孔结构的碳化硅陶瓷。以简便的方式成功制备出具有可调、均匀和双峰孔结构的多孔陶瓷。第一模态和第二模态大孔的形成机制分别为HO发泡过程和碳化硅颗粒重叠。研究了造孔剂用量、发泡温度和表面活性剂的影响。结果表明,随着HO用量的增加,第一模态孔的孔隙率、孔径和连通性增加,而体积密度和强度降低。随着发泡温度的升高,孔隙率增加而强度降低。表面活性剂增加了孔的连通性和孔隙率。当发泡温度为85℃且HO的添加量为5 wt.%时,孔隙率、体积密度、抗弯强度和抗压强度分别为56.32%、2.8301 g/cm、11.94 MPa和24.32 MPa。此外,碳化硅多孔陶瓷对酸和碱表现出优异的耐腐蚀性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/8412e5cd4686/materials-16-01342-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/fdc28c49480e/materials-16-01342-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/02fad4a5edcd/materials-16-01342-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/a1edc7d52f6d/materials-16-01342-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/76f28e69308b/materials-16-01342-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/636d42f0a4d8/materials-16-01342-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/a0018b8b00f3/materials-16-01342-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/8412e5cd4686/materials-16-01342-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/fdc28c49480e/materials-16-01342-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/02fad4a5edcd/materials-16-01342-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/a1edc7d52f6d/materials-16-01342-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/76f28e69308b/materials-16-01342-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/636d42f0a4d8/materials-16-01342-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/a0018b8b00f3/materials-16-01342-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d933/9962626/8412e5cd4686/materials-16-01342-g007.jpg

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