Tanwar Manushree, Bansal Love, Rani Chanchal, Rani Sonam, Kandpal Suchita, Ghosh Tanushree, Pathak Devesh K, Sameera I, Bhatia Ravi, Kumar Rajesh
Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol, Indore 453552, India.
Department of Physics, Guru Jambheshwar University of Science & Technology, Hisar 125001, India.
ACS Phys Chem Au. 2022 May 20;2(5):417-422. doi: 10.1021/acsphyschemau.2c00021. eCollection 2022 Sep 28.
Excitation wavelength-dependent Raman spectroscopy has been carried out to study electron-phonon interaction (Fano resonance) in multi-layered bulk 2H-MoS nano-flakes. The electron-phonon coupling is proposed to be caused due to interaction between energy of an excitonic quasi-electronic continuum and the discrete one phonon, first-order Raman modes of MoS. It is proposed that an asymmetrically broadened Raman line shape obtained by 633 nm laser excitation is due to electron-phonon interaction whose electronic continuum is provided by the well-known A and B excitons. Typical wavelength-dependent Raman line shape has been observed, which validates and quantifies the Fano interaction present in the samples. The experimentally obtained Raman scattering data show very good agreement with the theoretical Fano-Raman line-shape functions and help in estimating the coupling strength. Values of the electron-phonon interaction parameter obtained, through line-shape fitting, for the two excitation wavelengths have been compared and shown to have generic Fano-type dependence on the excitation wavelength.
已开展激发波长相关的拉曼光谱研究,以探究多层块状2H-MoS纳米薄片中的电子-声子相互作用(法诺共振)。电子-声子耦合被认为是由激子准电子连续体的能量与离散的单声子(MoS的一阶拉曼模式)之间的相互作用引起的。有人提出,用633 nm激光激发获得的不对称展宽拉曼线形是由于电子-声子相互作用,其电子连续体由著名的A和B激子提供。已观察到典型的波长相关拉曼线形,这验证并量化了样品中存在的法诺相互作用。实验获得的拉曼散射数据与理论法诺-拉曼线形函数非常吻合,有助于估计耦合强度。通过线形拟合获得的两个激发波长的电子-声子相互作用参数值已进行比较,并显示出对激发波长具有一般的法诺型依赖性。