Rath Deb Kumar, Pandey Shivansh Raj, Shekhawat Abhishek S, Bansal Love, Sahu Bhumika, Ahlawat Nikita, Saxena Shailendra K, Chondath Subin Kaladi, Kumar Rajesh
Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol, Indore, Madhya Pradesh 453552, India.
Department of Physics & Nanotechnology, SRM Institute of Science & Technology Kattankulathur, Chennai 603203, India.
iScience. 2025 Mar 1;28(4):112137. doi: 10.1016/j.isci.2025.112137. eCollection 2025 Apr 18.
Understanding electron-phonon (Fano) interactions, by employing techniques like Raman spectroscopy, in materials proves important in designing them for appropriate optoelectronic applications and extracting optimized performance. Orthorhombic vanadium pentoxide (VO) micro crystallites' B/B mode around 702 cm has been investigated to establish that this mode shows a resonant Fano interaction. Suitably designed wavelength and temperature-dependent Raman measurements collect sufficient evidence to establish that Fano-Raman line-shape can be observed under off-resonant excitation also if the system's temperature is elevated to generate sufficient thermal phonons in VO. Such resonant Fano interactions can be made possible due to the involvement of thermal phonons as a facilitator which acts as a bridge between the discrete phonons and electronic continuum to initiate the quantum interference. A non-linear dependence of the Fano coupling parameter on temperature was observed. A quantum mechanical framework has been suggested to elucidate the temperature-dependent resonant characteristics of Fano interaction under off-resonant excitation in VO.
事实证明，通过拉曼光谱等技术来理解材料中的电子 - 声子（法诺）相互作用，对于将其设计用于合适的光电子应用并提取优化性能至关重要。对正交晶系五氧化二钒（VO）微晶在702 cm附近的B/B模式进行了研究，以确定该模式显示出共振法诺相互作用。经过适当设计的波长和温度相关的拉曼测量收集了充分的证据，证明即使将系统温度升高以在VO中产生足够的热声子，在非共振激发下也能观察到法诺 - 拉曼线形。由于热声子作为促进剂的参与，这种共振法诺相互作用成为可能，热声子充当离散声子与电子连续体之间的桥梁以引发量子干涉。观察到法诺耦合参数对温度的非线性依赖性。已提出一个量子力学框架来阐明VO在非共振激发下法诺相互作用的温度相关共振特性。
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