Suppr超能文献

利用多波长激发拉曼散射揭示1L至5L WSe₂中的复杂声子性质和声子级联。

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe using multiwavelength excitation Raman scattering.

作者信息

Blaga Claire, Labordet Álvarez Ángel, Balgarkashi Akshay, Banerjee Mitali, Fontcuberta I Morral Anna, Dimitrievska Mirjana

机构信息

Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland.

Nanomaterials Spectroscopy and Imaging Group, Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Material Science and Technology (EMPA) Ueberlandstrasse 129 8600 Duebendorf Switzerland

出版信息

Nanoscale Adv. 2024 Jul 30;6(18):4591-603. doi: 10.1039/d4na00399c.

Abstract

Tungsten diselenide (WSe) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation and identification of phonon modes. This work presents a complete investigation of the vibrational properties of 1L to 5L flakes and bulk WSe using multi-wavelength Raman spectroscopy. We especially highlight measurements using 785 nm excitation, which have not been performed before. These allow us to solve inconsistences in the literature in terms of defect-activated non- point single phonon modes and Breit-Wigner-Fano type resonance. We identify 35 Raman peaks per flake thickness, which we attribute to either one-phonon or multi-phonon modes, including two-phonon scattering due to a van Hove singularity (vHs). The measurements are in excellent agreement with the theoretical predictions. Using photoluminescence measurements, we identify photon-exciton coupling leading to resonant Raman scattering, suggesting wavelength laser excitations best suited for further investigations of specific WSe flake thicknesses. Finally, we report the observation of phonon-cascades for all WSe flake thicknesses, indicating strong phonon-electron interactions during early carrier relaxation processes in WSe. This research provides a solid foundation and reference for future investigations of the vibrational properties of WSe, paving the way for further development of this material towards applications.

摘要

二硒化钨(WSe)是一种二维半导体材料,在新型光电子和声子应用方面具有广阔前景。WSe具有复杂的晶格动力学和声子结构。关于声子模式的解释和识别,文献中存在许多差异。这项工作使用多波长拉曼光谱对1L至5L薄片以及块状WSe的振动特性进行了全面研究。我们特别强调了使用785 nm激发光的测量,此前尚未进行过此类测量。这些测量使我们能够解决文献中关于缺陷激活的非点单声子模式和Breit-Wigner-Fano型共振方面的不一致问题。我们为每个薄片厚度识别出35个拉曼峰,将其归因于单声子或多声子模式,包括由于范霍夫奇点(vHs)引起的双声子散射。测量结果与理论预测高度吻合。通过光致发光测量,我们识别出导致共振拉曼散射的光子 - 激子耦合,表明特定波长的激光激发最适合进一步研究特定WSe薄片厚度。最后,我们报告了在所有WSe薄片厚度下都观察到了声子级联现象,这表明在WSe早期载流子弛豫过程中存在强烈的声子 - 电子相互作用。这项研究为未来对WSe振动特性的研究提供了坚实的基础和参考,为该材料在应用方面的进一步发展铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5ba8/11386128/4c0603dabec6/d4na00399c-f1.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验