Key Laboratory of Green Printing, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China.
Adv Mater. 2023 Jun;35(22):e2211593. doi: 10.1002/adma.202211593. Epub 2023 Apr 18.
Surface trap as intrinsic defects-mediated non-radiative charge recombination is a major obstacle to achieving the reliable fabrication of high-efficiency and large-area perovskite photovoltaics. Here a CS vapor-assisted passivation strategy is proposed for perovskite solar module, aiming to passivate the iodine vacancy and uncoordinated Pb caused by ion migration. Significantly, this method can avoid the disadvantages of inhomogeneity film caused by spin-coating-assisted passivation and reconstruction of perovskite surface from solvent. The CS vapor passivated perovskite device presents a higher defect formation energy (0.54 eV) of iodine vacancy than the pristine (0.37 eV), while uncoordinated Pb is bonded with CS . The shallow level defect passivation of iodine vacancy and uncoordinated Pb has obviously enhanced the device efficiencies (25.20% for 0.08 cm and 20.66% for 40.6 cm ) and the stability, exhibiting an average T -lifetime of 1040 h working at the maximum power point, and maintaining over 90% of initial efficiency after 2000 h at RH = 30% and 30 °C.
表面陷阱作为本征缺陷介导的非辐射电荷复合是实现高效大面积钙钛矿光伏器件可靠制备的主要障碍。在此，提出了一种 CS 蒸汽辅助钝化策略用于钙钛矿太阳能模块，旨在钝化离子迁移引起的碘空位和未配位的 Pb。显著的是，该方法可以避免旋涂辅助钝化和溶剂中钙钛矿表面重构引起的膜不均匀的缺点。CS 蒸汽钝化的钙钛矿器件中碘空位的缺陷形成能（0.54 eV）高于原始钙钛矿的（0.37 eV），而未配位的 Pb 与 CS 键合。碘空位和未配位 Pb 的浅能级缺陷钝化明显提高了器件效率（0.08 cm²时为 25.20%，40.6 cm²时为 20.66%）和稳定性，在最大功率点下工作时平均 T 寿命为 1040 h，在 RH = 30%和 30°C 下 2000 h 后仍保持初始效率的 90%以上。
