Department of Material Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.
Chemistry Department, University of Liverpool, Liverpool, United Kingdom.
Sci Rep. 2023 Mar 9;13(1):3944. doi: 10.1038/s41598-023-30976-3.
This work presents a new method for processing single-crystal semiconductors designed by a computational method to lower the process temperature. This research study is based on a CALPHAD approach (ThermoCalc) to theoretically design processing parameters by utilizing theoretical phase diagrams. The targeted material composition consists of Bi-Se-Te-Sb (BSTS). The semiconductor alloy contains three phases, hexagonal, rhombohedral-1, and rhombohedral-2 crystal structures, that are presented in the phase field of the theoretical pseudo-binary phase diagram. The semiconductor is also evaluated by applying Hume-Rothery rules along with the CALPHAD approach. Thermodynamic modelling suggests that single-crystals of BSTS can be grown at significantly lower temperatures and this is experimentally validated by low-temperature growth of single crystalline samples followed by exfoliation, compositional analysis, and diffraction.
这项工作提出了一种新的方法,用于处理通过计算方法设计的单晶硅半导体,以降低工艺温度。这项研究基于 CALPHAD 方法(ThermoCalc),通过利用理论相图来理论设计处理参数。目标材料组成包括 Bi-Se-Te-Sb(BSTS)。半导体合金包含三种相,即六方、菱方-1 和菱方-2 晶体结构,它们存在于理论伪二元相图的相场中。该半导体还通过应用 Hume-Rothery 规则和 CALPHAD 方法进行了评估。热力学建模表明,BSTS 的单晶体可以在明显更低的温度下生长,这通过低温生长单晶样品并随后进行剥离、成分分析和衍射实验得到了验证。